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BY229X-400 데이터시트 PDF




Thinki Semiconductor에서 제조한 전자 부품 BY229X-400은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 BY229X-400 기능
기능 (BY229X200 - BY229X800) 8.0 Ampere Insulated Glass Passivated Ultra Fast Recovery Rectifiers
제조업체 Thinki Semiconductor
로고 Thinki Semiconductor 로고


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BY229X-400 데이터시트, 핀배열, 회로
BY229X200 thru BY229X800
®
Pb Free Plating Product
BY229X200 thru BY229X800
Pb
8.0 Ampere Insulated Glass Passivated Ultra Fast Recovery Rectifiers
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Switching mode power supply
Inverter/converter
TV receiver,monitor/set top box
Mechanical Data
Case: Molded plastic Isolated/Insulated ITO-220AC
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diodes body
Mounting position: Any
Weight: 2.03 grams approximately
ITO-220AC
.419(10.66)
.387(9.85)
.167(3.73)
.122(3.10)
Unit : inch (mm)
.196(5.00)
.163(4.16)
.118(3.00)
.079(2.00)
.038(0.96)
.019(0.50)
.025(0.65)MAX
.1(2.54)
.1(2.54)
BY229 series with TO-220AC(Heatsink) pkg
BY229X series with ITO-220AC(Insulated) pkg
BY229B series with TO-263AB(D2PAK) pkg
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL BY229X200 BY229X400 BY229X600 BY229X800
BY229X-200 BY229X-400 BY229X-600 BY229X-800
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at TC = 100 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
VRMS
VDC
IF(AV)
IFSM
200
140
200
400 600
280 420
400 600
8.0
100
800
560
800
Maximum slope of reverse recovery current
IF = 2.0 A, VR = 30 V, dI/dt = 20 µs
Operating junction and storage temperature range
Isolation voltage (ITO-220AC only)
from terminal to heatsink t = 1 min
dI/dt
TJ, TSTG
VAC
60
- 40 to + 150
1500
UNIT
V
V
V
A
A
A/μs
°C
V
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward
voltage (1)
8.0 A
BY229X200 BY229X400 BY229X600 BY229X800
SYMBOL
BY229X-200 BY229X-400 BY229X-600 BY229X-800 UNIT
VF 0.98 1.3 1.7 1.8 V
Maximum DC reverse current at
rated DC blocking voltage
Maximum reverse recovery time
Maximum recovered stored charge
TJ = 25 °C
TJ = 125 °C
IF = 1.0 A, VR = 30 V,
dI/dt = 50 A/µs, Irr = 10 % IRM
IF = 2.0 A, VR = 30 V,
dI/dt = 20 A/µs
IR
trr
Qrr
10
250
35
700
µA
50 ns
nC
Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL BY229 series BY229X series BY229B series UNIT
Typical thermal resistance from junction to case
Typical thermal resistance from junction to air
RθJC
2.0
4.8
2.0 °C/W
RθJA
20
-
20 °C/W
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
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