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PDF MUR2040CA Data sheet ( Hoja de datos )
| Número de pieza | MUR2040CA | |
| Descripción | (MUR2005 - MUR2060) 20.0 Ampere Glass Passivated Junction Ultrafast Recovery Rectifiers | |
| Fabricantes | Thinki Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MUR2040CA (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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MUR2005 thru MUR2060
®
MUR2005 thru MUR2060
Pb Free Plating Product
Pb
20.0 Ampere Glass Passivated Junction Ultrafast Recovery Rectifiers
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Environment|DC Motor Control
Plating Power Supply|UPS
Amplifier and Sound Device System etc..
Mechanical Data
Case: Molded plastic TO-220AB Heatsink
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity:As marked on diode body
Mounting position: Any
Weight: 2.03 grams
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
.025(0.65)MAX
Case
Positive
Common Cathode
Suffix "CT"
Case
Negative
Common Anode
Suffix "CA"
Case
Doubler
Series Connection
Suffix "GD"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Common Cathode Suffix "CT"
Common Anode Suffix "CA"
Anode and Cathode Coexistence Suffix "GD"
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
MUR2005CT MUR2010CT MUR2020CT MUR2030CT MUR2040CT MUR2060CT
SYMBOL MUR2005CA MUR2010CA MUR2020CA MUR2030CA MUR2040CA MUR2060CA UNIT
MUR2005GD MUR2010GD MUR2020GD MUR2030GDMUR2040GD MUR2060GD
VRRM
50
100 200 300 400 600 V
VRMS
35
70 140 210 280 420 V
Maximum DC Blocking Voltage
VDC 50 100 200 300 400 600 V
Maximum Average Forward Rectified
Current TC=125oC
IF(AV)
20.0 A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
200
175 A
Maximum Instantaneous Forward Voltage
@ 10.0 A
VF
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
IR
Maximum Reverse Recovery Time (Note 1) Trr
Typical junction Capacitance (Note 2)
Operating Junction and Storage
Temperature Range
CJ
TJ, TSTG
0.975
120
1.3
10.0
250
35
-55 to +150
70
1.5 V
uA
uA
nS
pF
oC
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
1 page | ||
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| PDF Descargar | [ Datasheet MUR2040CA.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MUR2040CA | (MUR2005 - MUR2060) 20.0 Ampere Glass Passivated Junction Ultrafast Recovery Rectifiers | Thinki Semiconductor |
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