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PDF MUR1620 Data sheet ( Hoja de datos )

Número de pieza MUR1620
Descripción (MUR1605 - MUR1660) 16.0 Amp.Glass Passivated Ultra Fast Recovery Rectifiers
Fabricantes Thinki Semiconductor 
Logotipo Thinki Semiconductor Logotipo



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No Preview Available ! MUR1620 Hoja de datos, Descripción, Manual

MUR1605 thru MUR1660
®
Pb Free Plating Product
MUR1605 thru MUR1660
Pb
16.0 Amp.Glass Passivated Ultra Fast Recovery Rectifiers
Features
¬ Fast switching for high efficiency
¬ Low forward voltage drop
¬ High current capability
¬ Low reverse leakage current
¬ High surge current capability
Mechanical Data
¬ Case: Molded TO-220AC
¬ Epoxy: UL 94V-0 rate flame retardant
¬ Terminals: Solderable per MIL-STD-202
method 208
¬ Polarity:Color band denotes cathode
¬ Mounting position: Any
¬ Weight: 2.03 grams
TO-220AC
2
Unit : inch (mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
@TA =75
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)
Peak Forward Voltage at 16.0A DC
Maximum DC Reverse Current @TJ=25
at Rated DC Blocking Voltage @TJ=100
Maximum Reverse Recovery Time(Note1)
Typical Junction Capacitance (Note2)
Typical Thermal Resistance (Note3)
Operating and Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
MUR
1605
50
35
50
I(AV)
MUR
1610
100
70
100
MUR
1615
150
105
150
MUR
1620
200
140
200
16.0
MUR
1630
300
210
300
MUR
1640
400
280
400
MUR
1660
600
420
600
UNIT
V
V
V
A
IFSM
VF
IR
TRR
CJ
RθJA
TJ,TSTG
300
0.95
10
150
35
80
2.5
-55 to + 150
1.3
A
1.7 V
μA
nS
pF
/W
NOTES:1.Measured with IF=0.5A,IR=1A,IRR=0.25A
2.Measured at 1.0 MHZ and applied reverse voltage of 4.0VDC.
3.Thermal resistance junction to ambient
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
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