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PDF MBR20200CT Data sheet ( Hoja de datos )
| Número de pieza | MBR20200CT | |
| Descripción | (MBR2035CT - MBR20200CT) 20.0 Ampere Schottky Barrier Rectifiers | |
| Fabricantes | Thinki Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MBR20200CT (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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MBR2035CT thru MBR20200CT
®
Pb Free Plating Product
MBR2035CT thru MBR20200CT
20.0 Ampere Schottky Barrier Rectifiers
Features
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260oC/10 seconds,0.25”(6.35mm)from case
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Pb
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
Mechanical Data
Cases: JEDEC TO-220AB molded plastic
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
.038(0.96)
.019(0.50)
.1(2.54)
.025(0.65)MAX
.1(2.54)
Positive CT
AC
AC
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at TC=135oC
Peak Repetitive Forward Current (Rated VR, Square Wave,
20KHz) at Tc=135oC
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at (Note 2)
IF=10A, TC=25OC
IF=10A, TC=125OC
IF=20A, TC=25OC
IF=20A, TC=125OC
Maximum Instantaneous Reverse Current @ Tc=25℃
at Rated DC Blocking Voltage
@ Tc=125℃
Voltage Rate of Change, (Rated VR)
Typical Junction Capacitance
Typical Thermal Resistance Per Leg (Note 3)
Operating Junction Temperature Range
Storage Temperature Range
VRRM
VRMS
VDC
I(AV)
IFRM
IFSM
IRRM
VF
IR
dV/dt
Cj
RθJC
TJ
TSTG
MBR
2035
CT
35
24
35
MBR
2045
CT
45
31
45
MBR
2050
CT
50
35
50
MBR
2060
CT
60
42
60
20
MBR
2090
CT
90
63
90
MBR MBR
20100 20200
CT CT
100 200
70 140
100 200
20
150
1.0 0.5
-
0.57
0.84
0.72
0.1
15
400
1.0
0.80
0.70
0.95
0.85
0.85
0.75
0.95
0.85
0.1
10 5.0
10,000
320
2.0
-65 to +150
-65 to +175
0.99
0.87
1.23
1.10
Units
V
V
V
A
A
A
A
V
mA
mA
V/uS
pF
oC/W
oC
oC
Notes:
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, with Heatsink Size (4”x6”x0.25”) Al-Plate.
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MBR20200CT.PDF ] | |
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