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SMBJ8.5A 데이터시트 PDF




Galaxy Semi-Conductor에서 제조한 전자 부품 SMBJ8.5A은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 SMBJ8.5A 자료 제공

부품번호 SMBJ8.5A 기능
기능 (SMBJ5.0 - SMBJ188CA) TRANSIENT VOLTAGE SUPPRESSOR
제조업체 Galaxy Semi-Conductor
로고 Galaxy Semi-Conductor 로고


SMBJ8.5A 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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SMBJ8.5A 데이터시트, 핀배열, 회로
BL GALAXY ELECTRICAL
TRANSIENT VOLTAGE SUPPRESSOR
FEATURES
Underwriters Laboratory Recognition under UL standard
for safety 497B: Isolated Loop Circuit Protection
Low profile package with built-in strain relief for surface
mounted applications
Glass passivated junction
Low incremental surge resistance, excellent clamping
capability
600W peak pulse power capability with a 10/1000µs
waveform, repetition rate (duty cycle): 0.01%
Very fast response time
High temperature soldering guaranteed:
250°C/10 seconds at terminals
MECHANICAL DATA
Case:JEDEC DO-214AA molded plastic over passivated
junction
Terminals: Solder plated, solderable per MIL-STD-750,
method 2026
Polarity: Foruni-directional types the color band denotes
the cathode, which is postitive with respect to the
anode under normal TVS operation
Weight: 0.003 ounces, 0.093 grams
Flammability: Epoxy is rated UL 94V-0
SMBJ5.0---SMBJ188CA
BREAKDOWN VOLTAGE: 5.0 --- 188 V
PEAK PULSE POWER: 600 W
DO-214AA(SMB)
inch(mm)
Devices for Bidirectional Applications
For bi-directional devices, use suffix C or CA (e.g. SMBJ10C, SMBJ10CA). Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Peak pow er dissipation w ith a 10/1000μs w aveform (NOTE 1,2, FIG.1)
SYMBOL
PPPM
VALUE
Minimum 600
UNIT
W
Peak pulse current w ith a 10/1000μs w aveform (NOTE 1)
Peak forw ard surge current, 8.3ms single half sine-w ave
ffff uni-directional only( (NOTE 2)
Typical thermal resistance, junction to ambient( (NOTE 3)
Typical thermal resistance, junction to lead
Operating junction and storage temperature range
NOTES: (1) Non-repetitive current pules, per Fig. 3 and derated above TA=25 per Fig. 2.
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pads to each terminal.
(3) Mounted on minimum recommended pad layout.
IPPM
See Table Below
A
IFSM
RθJA
RθJL
TJ, TSTG
100.0
A
100.0
/W
20 /W
-55---+150
www.galaxycn.com
Document Number 0285006,
BLGALAXY ELECTRICAL
1.
Free Datasheet http://www.datasheet4u.com/




SMBJ8.5A pdf, 반도체, 판매, 대치품
RATINGS AND CHARACTERISTIC CURVES
SMBJ5.0---SMBJ188CA
FIG.1 -- PEAK PULSE POWER RATING CURVE
100
NON-REPETITIVE
PULSE WAVEFORM
SHOWN IN FIG.3
TA=25
10
1.0 0.2 x 0.2" (0.5 x 0.5mm)
Copper Pad Areas
0.1
0.1 s
1.0 s
10 s
100 s 1ms
10ms
td, PULSEWIDTH, SEC.
FIG.3 -- PULSE WAVEFORM
150
tr=10 sec
PULES WIDTH (td)
is DEFINDE as the
PEAK VALUE POINT WHERE the
I PPM
PEAK CURRENT
100
DECAYS to 50% of
I PPM
HALF VALUE - IPPM
2
10/1000¦ Μsec.
50
WAVEFORM as
DEFINED by
R.E.A.
td
00 1.0 2.0 3.0 4.0
t, TIME, ms
FIG.2 -- PULSE DERATING CURVE
100
75
50
25
0 0 25 50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE.
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
H HHHHHHH UNIDIRECTIONAL
6,000
Measured at
Zero Bias
1,000
100
10
1.0
VR, Measured at
Stand-Off
Voltage, VWM
TJ=25
f=1.0MHZ
Vsig=50mVp-p
10 100
V(BR), BREAKDOWN VOLTAGE, V
200
FIG.5 -- TYPICAL TRANSIENT THERMAL IMPEDANCE
FIG.6 -- MAXIMUM NON-REPETITIVE PEAK FORWARD
HHHH HSURGE CURRENT
1000
100
10
1
0.001
0.01 0.1
1
10 100 1000
tp — PULSE DURATION, SEC
200
TJ=TJ max.
8.3ms SINGLE HALF SINE-MAVE
100 (JEDEC METHOD)
50
10
1 10 100
NUMBER OF CYCLES AT 60 Hz
www.galaxycn.com
Document Number 0285006
BLGALAXY ELECTRICAL
4.
Free Datasheet http://www.datasheet4u.com/

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