(PDF) HF50-12 Datasheet - NPN SILICON RF POWER TRANSISTOR

Número de pieza	HF50-12
Descripción	NPN SILICON RF POWER TRANSISTOR
Fabricantes	Advanced Semiconductor
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No Preview Available ! HF50-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The HF50-12 is Designed for 12.5 Volt Class AB and Class C Power Amplifier Applications Operating in the 2 to 32 MHz HF Band. FEATURES INCLUDE: • High Gain, 16 dB Typical @ 30 MHz • Emitter Ballasting • Withstands Severe Mismatch MAXIMUM RATINGS IC 10 A VCB 36 V VCE 18 V VEB PDISS TJ T STG θ JC 4.0 V 175 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +150 OC 1.0 OC/W PACKAGE STYLE .380" 4L FLANGE 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM BVCES IC = 100 mA 36 BVCEO IC = 100 mA 18 BVEBO IE = 10 mA 4.0 ICES VCE = 15 V 10 hFE VCE = 5.0 V IC = 5.0 A 20 Cob VCB = 12.5 V f = 1.0 MHz 200 GPE η IMD VCC = 12.5 V ICQ = 50 mA POUT = 50 W(PEP) f = 30 MHz 15 16 55 -30 UNITS V V V mA --- pF dB % dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 1 page

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PDF HF50-12 Data sheet ( Hoja de datos )