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PDF 2SD882 Data sheet ( Hoja de datos )
| Número de pieza | 2SD882 | |
| Descripción | PNP/NPN Epitaxial Planar Transistors | |
| Fabricantes | Weitron | |
| Logotipo |  |
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 1. NPN ( Datasheet PDF )  Hay una vista previa y un enlace de descarga de 2SD882 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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PNP / NPN Epitaxial Planar Transistors
P b Lead(Pb)-Free
22SSDB787822
TO-126
1.EMITTER
2.COLLECTOR
3.BASE
1
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)(1)
Base Current
Total Cevice Disspation Ta=25°C
Total Cevice Disspation Tc=25°C
Junction Temperature
Storage, Temperture
Symbol
VCEO
VCBO
VEBO
IC(DC)
IC(Pulse)
IB(Pulse)
PD
PD
Tj
Tstg
PNP/2SB772 NPN/2SD882
-30 30
-40 40
-5.0 5.0
-3.0 3.0
-7.0 7.0
-0.6 0.6
1.0
10
150
-55 to +150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
W
°C
°C
Device Marking
2SB772=B772 , 2SD882=D882
ELECTORICAL CHARACTERISTICS
Characteristics
Collect-Emitter Breakdown Voltage (IC=-10/10 mAdc, IB=0)
Collect-Base Breakdown Voltage (IC=-100/100 µAdc, IE=0)
Emitter-Base Breakdown Voltage (IE=-100/100 µAdc, IC=0)
Collector Cutoff Current (VCE=-30/30 Vdc, IB=0)
Collector Cutoff Current (VCB=-40/40 Vdc, IE=0)
Emitter Cutoff Current (VEB=-6.0/6.0Vdc, IC=0)
NOTE: 1.PW ≤ 350us, duty cycle ≤ 2%
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEO
ICBO
IEBO
Min
-30/30
Max
-
-40/40
-
-5.0/5.0
-
- -1.0/1.0
- -1.0/1.0
- -1.0/1.0
Unit
Vdc
Vdc
Vdc
µAdc
µAdc
µAdc
WEITRON
http://www.weitron.com.tw
1/5 Rev.B 14-Aug-07
1 page  
2SB772
2SD882
TO-126 Outline Dimensions
G
A
B
D
C
J
K
E
unit: mm
Dim
A
B
C
D
E
G
H
J
K
L
M
S
φ
TO-126
Min
2.500
1.100
0.660
1.170
0.450
7.400
10.600
MAX
2.900
1.500
0.860
1.370
0.600
7.800
11.000
2.290TYP
4.480
4.680
15.300 15.700
2.100
2.300
3.900
4.100
3.000
3.200
WEITRON
http://www.weitron.com.tw
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 2SD882.PDF ] | |
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