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PDF 04N80C3 Data sheet ( Hoja de datos )
| Número de pieza | 04N80C3 | |
| Descripción | SPA04N80C3 | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 04N80C3 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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CoolMOSTM Power Transistor
Features
• New revolutionary high voltage technology
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Ultra low gate charge
• Ultra low effective capacitances
• Fully isolated package (2500 VAC; 1 minute)
CoolMOSTM 800V designed for:
• Industrial application with high DC bulk voltage
• Switching Application ( i.e. active clamp forward )
Product Summary
V DS
R DS(on)max @ Tj = 25°C
Q g,typ
SPA04N80C3
800 V
1.3 Ω
23 nC
Type
SPA04N80C3
Package
PG-TO220-3
Marking
04N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current2)
ID
Pulsed drain current3)
I D,pulse
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
3),4)
AR
Avalanche
current,
repetitive
t
3),4)
AR
MOSFET dv /dt ruggedness
E AS
E AR
I AR
dv /dt
Gate source voltage
V GS
T C=25 °C
T C=100 °C
T C=25 °C
I D=0.8A, V DD=50 V
I D=4 A, V DD=50 V
V DS=0…640 V
static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T j, T stg
Mounting torque
M2.5 screws
Rev. 2.9
page 1
Value
4
2.5
12
170
0.1
4
50
±20
±30
38
-55 ... 150
50
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
2008-10-15
Free Datasheet http://www.datasheet4u.com/
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=150 °C; t p=10 µs
parameter: V GS
6
5
6V
4
3 5.5 V
2 5V
4.5 V
1
20 V
10 V
SPA04N80C3
6 Typ. drain-source on-state resistance
R DS(on)=f(I D); T j=150 °C
parameter: V GS
5.4
5
4.6
4.2
3.8
3.4
4.5 V
4V
5V
3
5.5 V
6V
10 V
20 V
0
0 5 10 15
V DS [V]
7 Drain-source on-state resistance
R DS(on)=f(T j); I D=2.5 A; V GS=10 V
20
3.2
2.6
25 0
246
I D [A]
8 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max; t p=10 µs
parameter: T j
15
2.8 25 °C
2.4
10
2
1.6 98 %
1.2 typ
0.8
5
150 °C
0.4
0
-60 -20 20
60 100 140 180
T j [°C]
0
02468
V GS [V]
8
10
Rev. 2.9
page 5
2008-10-15
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet 04N80C3.PDF ] | |
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