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부품번호 | STU8NC90Z 기능 |
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기능 | N-channel Power MOSFET | ||
제조업체 | STMicroelectronics | ||
로고 | |||
STU8NC90Z
STU8NC90ZI
N-CHANNEL 900V - 1.1Ω - 7.6A Max220/I-Max220
Zener-Protected PowerMESH™III MOSFET
TYPE
VDSS
RDS(on)
ID
STU8NC90Z
STU9NC90ZI
900 V
900 V
< 1.38Ω
< 1.38Ω
7A
7A
s TYPICAL RDS(on) = 1.1Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s GATE-TO-SOURCE ZENER DIODES
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.
23
1
Max220
I-Max220
APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (1) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
IGS Gate-source Current
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)
dv/dt(q) Peak Diode Recovery voltage slope
VISO
Insulation Winthstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
Sep 2000
Value
STU8NC90Z
STU8NC90ZI
900
900
±25
7 7(*)
4.4 4.4(*)
28 28(*)
160
1.28
55
0.44
±50
4
3
-- 2000
–65 to 150
150
(1)ISD ≤ 7A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(*)Limited only by maximum temperature allowed
Unit
V
V
V
A
A
A
W
W/°C
mA
KV
V/ns
V
°C
°C
1/10
Free Datasheet http://www.datasheet4u.com/
STU8NC90Z/STU8NC90ZI
Safe Operating Area For Max220
Safe Operating Area For I-Max220
Thermal Impedance For Max220
Thermal Impedance For I-Max220
Output Characteristics
Transfer Characteristics
4/10
Free Datasheet http://www.datasheet4u.com/
4페이지 Fig. 1: Unclamped Inductive Load Test Circuit
STU8NC90Z/STU8NC90ZI
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
7/10
Free Datasheet http://www.datasheet4u.com/
7페이지 | |||
구 성 | 총 10 페이지수 | ||
다운로드 | [ STU8NC90Z.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
STU8NC90Z | N-channel Power MOSFET | STMicroelectronics |
STU8NC90ZI | N-channel Power MOSFET | STMicroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |