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PDF STU8N80K5 Data sheet ( Hoja de datos )
| Número de pieza | STU8N80K5 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
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STP8N80K5,
STU8N80K5
N-channel 800 V, 0.8 Ω typ., 6 A Zener-protected SuperMESH™ 5
Power MOSFET in TO-220 and IPAK packages
Datasheet − production data
Features
TAB
3
2
1
TO-220
TAB
IPAK
3
2
1
Order codes VDS RDS(on)max. ID PTOT
STP8N80K5
800 V
STU8N80K5
0.95 Ω
6 A 110 W
• Worldwide best FOM (figure of merit)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected
Figure 1. Internal schematic diagram
D(2,TAB)
Applications
• Switching applications
Description
G(1)
S(3)
AM01476v1
These N-channel Zener-protected Power
MOSFETs are designed using ST’s revolutionary
avalanche-rugged very high voltage
SuperMESH™ 5 technology, based on an
innovative proprietary vertical structure. The
result is a dramatic reduction in on-resistance,
and ultra-low gate charge for applications which
require superior power density and high
efficiency.
Order codes
STP8N80K5
STU8N80K5
Table 1. Device summary
Marking
Package
8N80K5
TO-220
IPAK
Packaging
Tube
March 2013
This is information on a product in full production.
DocID023544 Rev 4
1/16
www.st.com
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Free Datasheet http://www.datasheet4u.com/
1 page  
STP8N80K5, STU8N80K5
Electrical characteristics
Symbol
Table 6. Switching times
Parameter
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 400 V, ID = 3 A,
RG=4.7 Ω, VGS=10 V
(see Figure 20)
Min. Typ. Max. Unit
- 12 - ns
- 14 - ns
- 32 - ns
- 20 - ns
Symbol
Table 7. Source drain diode
Parameter
Test conditions
ISD Source-drain current
ISDM Source-drain current (pulsed)
(1)
VSD Forward on voltage
ISD= 6 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 6 A, VDD= 60 V
di/dt = 100 A/μs,
(see Figure 19)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 6 A,VDD= 60 V
di/dt=100 A/μs,
Tj=150 °C
(see Figure 19)
1. Pulsed: pulse duration = 300μs, duty cycle 1.5%
Min. Typ. Max. Unit
- 6A
24 A
- 1.5 V
- 300
ns
-3
μC
- 20
A
- 415
ns
- 3.8
μC
- 18
A
Symbol
Table 8. Gate-source Zener diode
Parameter
Test conditions
Min Typ. Max. Unit
V(BR)GSO Gate-source breakdown voltage IGS = ± 1mA, ID=0
30 - - V
The built-in back-to-back Zener diodes have been specifically designed to enhance not only
the device’s ESD capability, but also to make them capable of safely absorbing any voltage
transients that may occasionally be applied from gate to source. In this respect, the Zener
voltage is appropriate to achieve efficient and cost-effective protection of device integrity.
The integrated Zener diodes thus eliminate the need for external components.
DocID023544 Rev 4
5/16
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5 Page 
STP8N80K5, STU8N80K5
Dim.
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
Package mechanical data
Table 9. TO-220 type A mechanical data
mm
Min.
Typ.
4.40
0.61
1.14
0.48
15.25
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
1.27
16.40
28.90
Max.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
DocID023544 Rev 4
11/16
Free
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