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Número de pieza | AO3416L | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | Freescale | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AO3416L (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! AO3416, AO3416L
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO3416 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and
operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM
applications. It is ESD protected. AO3416L ( Green Product ) is offered in a lead-free package.
Features
VDS (V) = 20V
ID = 6.5 A
RDS(ON) < 22mΩ (VGS = 4.5V)
RDS(ON) < 26mΩ (VGS = 2.5V)
RDS(ON) < 34mΩ (VGS = 1.8V)
ESD Rating: 2000V HBM
TO-236
(SOT-23)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
20
±8
6.5
5.2
30
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
65
85
43
Max
90
125
60
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
1/4
www.freescale.net.cn
Free Datasheet http://www.datasheet4u.com/
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet AO3416L.PDF ] |
Número de pieza | Descripción | Fabricantes |
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AO3416L | N-Channel Enhancement Mode Field Effect Transistor | Freescale |
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