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Número de pieza | AO3416 | |
Descripción | 20V N-Channel MOSFET | |
Fabricantes | Alpha & Omega Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de AO3416 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! AO3416
20V N-Channel MOSFET
General Description
Product Summary
The AO3416 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as
a load switch or in PWM applications. It is ESD
protected.
VDS
ID (at VGS=4.5V)
RDS(ON) (at VGS=4.5V)
RDS(ON) (at VGS = 2.5V)
RDS(ON) (at VGS = 1.8V)
ESD protected
20V
6.5A
< 22mΩ
< 26mΩ
< 34mΩ
SOT23
Top View
Bottom View
D
D
D
SG
GS
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
ID
IDM
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
G
S
Maximum
20
±8
6.5
5.2
30
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 5: July 2010
www.aosmd.com
Page 1 of 5
Free Datasheet http://www.datasheet4u.com/
1 page AO3416
+
VDC
-
Vgs
Ig
Gate Charge Test Circuit & Waveform
+
Vds
VDC
DUT -
Vgs
10V
Qgs
Qg
Qgd
Vds
Vgs
Rg
Vgs
R esistive Switching Test Circuit & W aveform s
RL
Vds
DUT
+
Vdd
VDC
-
Vgs
td(on) tr
ton
td(off)
tf
toff
Charge
90%
10%
Vds +
Vds -
Isd
Vgs
Ig
DUT
L
Diode Recovery Test Circuit & W aveform s
Vgs
Q rr = - Idt
+
Vdd
VDC
-
Isd
Vds
I F trr
dI/dt
I RM
Vdd
Rev 5: July 2010
www.aosmd.com
Page 5 of 5
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet AO3416.PDF ] |
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