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PDF AOT260L Data sheet ( Hoja de datos )

Número de pieza AOT260L
Descripción 60V N-Channel MOSFET
Fabricantes Alpha & Omega Semiconductors 
Logotipo Alpha & Omega Semiconductors Logotipo



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No Preview Available ! AOT260L Hoja de datos, Descripción, Manual

AOT260L/AOB260L
60V N-Channel MOSFET
General Description
The AOT(B)260L uses Trench MOSFET technology that
is uniquely optimized to provide the most efficient high
frequency switching performance. Power losses are
minimized due to an extremely low combination of
RDS(ON) and Crss.In addition, switching behavior is well
controlled with a “Schottky style” soft recovery body
diode.This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS =6V)
100% UIS Tested
100% Rg Tested
60V
140A
< 2.5m
< 2.9m
Top View
TO220
Bottom View
D
D
Top View
TO-263
D2PAK
Bottom View
D
D
D
G DS
AOT260L
S DG
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
S
G
AOB260L
Maximum
60
±20
140
110
500
20
16
128
819
330
165
1.9
1.2
-55 to 175
G
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
12
54
0.35
Max
15
65
0.45
G
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 1 : Jul 2011
www.aosmd.com
Page 1 of 6
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AOT260L pdf
AOT260L/AOB260L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
400
TA=25°C
100
TA=150°C
TA=100°C
TA=125°C
10
1 10 100 1000
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
300
200
100
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note F)
175
150 1000
TA=25°C
120
90 100 17
5
2
60 10 10
30
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note F)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=65°C/W
1
0.001
0.1 10 0 1000
Pulse Width (s) 18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
0.001
0.01
Single Pulse
PD
Ton
T
0.1 1 10 100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
1000
Rev 1 : Jul 2011
www.aosmd.com
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