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부품번호 | AOWF7S60 기능 |
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기능 | Power Transistor | ||
제조업체 | Alpha & Omega Semiconductors | ||
로고 | |||
전체 6 페이지수
AOW7S60/AOWF7S60
600V 7A α MOS TM Power Transistor
General Description
Product Summary
The AOW7S60 & AOWF7S60 have been fabricated using
the advanced αMOSTM high voltage process that is
designed to deliver high levels of performance and
robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS @ Tj,max
IDM
RDS(ON),max
Qg,typ
Eoss @ 400V
100% UIS Tested
100% Rg Tested
TO-262
Top View
Bottom View
TO-262F
Top View
Bottom View
700V
33A
0.6Ω
8.2nC
1.9µJ
D
DS
G
AOW7S60
G
SD
S
GD
AOWF7S60
G
SD
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
ID
IDM
IAR
EAR
EAS
TC=25°C
Power Dissipation B Derate above 25oC
PD
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt H
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds J
Thermal Characteristics
TL
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
AOW7S60
600
AOWF7S60
±30
7 7*
5 5*
33
1.7
43
86
104 25
0.8
100
20
0.2
-55 to 150
300
AOW7S60
65
0.5
1.2
AOWF7S60
65
--
5
S
Units
V
V
A
A
mJ
mJ
W
W/ oC
V/ns
°C
°C
Units
°C/W
°C/W
°C/W
Rev0: Aug 2011
www.aosmd.com
Page 1 of 6
Free Datasheet http://www.datasheet4u.com/
AOW7S60/AOWF7S60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E+02
15
1.0E+01
1.0E+00
1.0E-01
125°C
25°C
12
9
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)
Figure 7: Body-Diode Characteristics (Note E)
6
3
0
0
VDS=480V
ID=3.5A
2 4 6 8 10
Qg (nC)
Figure 8: Gate-Charge Characteristics
10000
5
12
1000
100
10
1
Ciss
Coss
Crss
4
3
2
1
Eoss
0
0 100 200 300 400 500
VDS (Volts)
Figure 9: Capacitance Characteristics
600
0
0 100 200 300 400 500 600
VDS (Volts)
Figure 10: Coss stroed Energy
100
10 RDS(ON)
limited
1
DC
0.1
TJ(Max)=150°C
TC=25°C
0.01
1 10 100
VDS (Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOW7S60 (Note F)
10µs
100µs
1ms
10ms
1000
100
10 RDS(ON)
limited
1
0.1
TJ(Max)=150°C
TC=25°C
DC
0.01
1 10 100
VDS (Volts)
Figure 12: Maximum Forward Biased Safe
Operating Area for AOWF7S60(Note F)
10µs
100µs
1ms
10ms
0.1s
1s
1000
Rev0: Aug 2011
www.aosmd.com
Page 4 of 6
Free Datasheet http://www.datasheet4u.com/
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ AOWF7S60.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
AOWF7S60 | Power Transistor | Alpha & Omega Semiconductors |
AOWF7S65 | Power Transistor | Alpha & Omega Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |