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BD5353 데이터시트 PDF




ROHM Semiconductor에서 제조한 전자 부품 BD5353은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 BD5353 자료 제공

부품번호 BD5353 기능
기능 (BD52xx / BD53xx) Free Delay Time Setting CMOS Voltage Detector IC
제조업체 ROHM Semiconductor
로고 ROHM Semiconductor 로고


BD5353 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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BD5353 데이터시트, 핀배열, 회로
Datasheet
Voltage Detector IC Series
Free Delay Time Setting
CMOS Voltage Detector IC Series
BD52xx series BD53xx series
General Description
Rohm's BD52xx and BD53xx series are highly
accurate, low current consumption Voltage Detector
ICs with a capacitor-controlled time delay. The line up
includes BD52xx devices with N channel open drain
output and BD53xx devices with CMOS output. The
devices are available for specific detection voltages
ranging from 2.3V to 6.0V in increments of 0.1V.
Features
Delay Time Controlled by external Capacitor
Two output types (N channel open drain and CMOS
output)
Ultra-low current consumption
Very small and low height package
Package SSOP5 is similar to SOT-23-5(JEDEC)
Typical Application Circuit
VDD1
VDD2
Key Specifications
Detection voltage:
2.3V to 6.0V (Typ.)
0.1V steps
High accuracy detection voltage:
±1.0%
Ultra-low current consumption:
0.95µA (Typ.)
Package
SSOP5:
2.90mm x 2.80mm x 1.25mm
VSOF5:
1.60mm x 1.60mm x 0.60mm
Applications
Circuits using microcontrollers or logic circuits that
require a reset.
VDD1
RL
BD52xx
RST
Micro
controller
CT
CL
(Capacitor for
noise filtering)
Open Drain Output type
BD52xx Series
Connection Diagram CT
SSOP5
N.C.
TOP VIEW
GND
CT
GND
VSOF5
TOP VIEW
BD53xx
RST
Micro
controller
CL
(Capacitor for
noise filtering)
CMOS Output type
BD53xx Series
VDD GND
54
Marking
Lot. No
Pin Descriptions
PIN No.
1
2
Symbol
VOUT
VDD
VOUT VDD GND
SSOP5
Function
Reset Output
Power Supply Voltage
3 GND
GND
4 N.C.
Unconnected Terminal
Capacitor connection terminal for
5 CT
output delay time
Marking 1 2 3
VOUT SUB CT
Lot. No
PIN No.
1
2
Symbol
VOUT
SUB
3 CT
4 GND
5 VDD
VSOF5
Function
Reset Output
Substrate*
Capacitor connection terminal for
output delay time
GND
Power Supply Voltage
*Connect the substrate to GND.
Product structureSilicon monolithic integrated circuit This product is not designed for protection against radioactive rays
.www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
1/13
TSZ02201-0R7R0G300040-1-2
22.May.2013 Rev.006
Free Datasheet http://www.datasheet4u.com/




BD5353 pdf, 반도체, 판매, 대치품
BD52xx series BD53xx series
Absolute maximum ratings
Parameter
Symbol
Limits
Power Supply Voltage
VDD-GND
-0.3 to +10
Output Voltage
Nch Open Drain Output
CMOS Output
VOUT
GND-0.3 to +10
GND-0.3 to VDD+0.3
Output Current
Power
Dissipation
SSOP5
VSOF5
*1*3
*2*3
Io
Pd
80
540
210
Operating Temperature
Topr -40 to +105
Ambient Storage Temperature
Tstg -55 to +125
*1 Reduced by 5.4mW/°C when used over 25°C.
*2 Reduced by 2.1mW/°C when used over 25°C.
*3 When mounted on ROHM standard circuit board (70mm×70mm×1.6mm, glass epoxy board).
Datasheet
Unit
V
V
mA
mW
°C
°C
Electrical characteristics (Unless Otherwise Specified Ta=-40 to 105°C)
Parameter
Symbol
Condition
VDD=H L, RL=470k
Limit
Min. Typ.
*1
VDET(T)
×0.99
VDET(T)
Ta=+25°C
2.475 2.5
VDET=2.5V
Ta=-40°C to 85°C
2.418
-
Ta=85°C to 105°C
2.404
-
Ta=+25°C
2.970 3.0
VDET=3.0V
Ta=-40°C to 85°C
2.901
-
Ta=85°C to 105°C
2.885
-
Detection Voltage
VDET
VDET=3.3V
Ta=+25°C
Ta=-40°C to 85°C
3.267
3.191
3.3
-
Ta=85°C to 105°C
3.173
-
Ta=+25°C
4.158 4.2
VDET=4.2V
Ta=-40°C to 85°C
4.061
-
Ta=85°C to 105°C
4.039
-
Ta=+25°C
4.752 4.8
VDET=4.8V
Ta=-40°C to 85°C
4.641
-
Ta=85°C to 105°C
4.616
-
VDET =2.3-3.1V
- 0.80
Circuit Current when ON
IDD1 VDD=VDET-0.2V
VDET =3.2-4.2V
VDET =4.3-5.2V
- 0.85
- 0.90
VDET =5.3-6.0V
- 0.95
VDET =2.3-3.1V
- 0.75
Circuit Current when OFF IDD2 VDD=VDET+2.0V
VDET =3.2-4.2V
VDET =4.3-5.2V
- 0.80
- 0.85
VDET =5.3-6.0V
- 0.90
Operating Voltage Range
VOL0.4V, Ta=25 to 105°C, RL=470k
VOPL
VOL0.4V, Ta=-40 to 25°C, RL=470k
0.95 -
1.20 -
‘Low’ Output Voltage (Nch)
VDD=1.5V, ISINK = 0.4 mA, VDET=2.3-6.0V
VOL
VDD=2.4V, ISINK = 2.0 mA, VDET=2.7-6.0V
--
--
VDD=4.8V, ISOURCE=0.7 mA, VDET(2.3V to 4.2V) VDD-0.5
-
‘High’ Output Voltage (Pch) VOH VDD=6.0V, ISOURCE=0.9 mA, VDET(4.3V to 5.2V) VDD-0.5
-
VDD=8.0V, ISOURCE=1.1 mA, VDET(5.3V to 6.0V) VDD-0.5
VDET (T) : Standard Detection Voltage (2.3V to 6.0V, 0.1V step)
RL: Pull-up resistor to be connected between VOUT and power supply.
Design Guarantee. (Outgoing inspection is not done on all products.)
*1 Guaranteed at Ta=25°C.
-
Max.
VDET(T)
×1.01
2.525
2.584
2.597
3.030
3.100
3.117
3.333
3.410
3.428
4.242
4.341
4.364
4.848
4.961
4.987
2.40
2.55
2.70
2.85
2.25
2.40
2.55
2.70
-
-
0.5
0.5
-
-
-
Unit
V
µA
µA
V
V
V
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
4/13
TSZ02201-0R7R0G300040-1-2
22.May.2013 Rev.006
Free Datasheet http://www.datasheet4u.com/

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BD5353 전자부품, 판매, 대치품
BD52xx series BD53xx series
Typical Performance Curves
2.0
BBDD55224422G/FVE
1.5 BD5342
1.0
0.5
0.0
0 1 2 3 4 5 6 7 8 9 10
VDD SUPPLY VOLTAGE VDD[V]
Fig.3 Circuit Current
Datasheet
18
BD5242G/FVE
BD5242
15
BD5342
12 VDD=2.4V
9
6
3 VDD=1.2V
0
0.0 0.5 1.0 1.5 2.0 2.5
DRAIN-SOURCE VOLTAGE VDS[V]
Fig.4 “Low” Output Current
45
40 BBDD55334422G/FVE
35
30
25
20 VDD=8.0V
15
10 VDD=6.0V
5 VDD=4.8V
0
0 12 34 56
DRAIN-SOURCE VOLTAGE VDS[V]
Fig.5 “High” Output Current
9
8 BBDD55224422G/FVE
7 BD5342
6
5
4
3 Ta=25
2
1 Ta=25
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
VDD SUPPLY VOLTAGE VDD[V]
Fig.6 I/O Characteristics
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
7/13
TSZ02201-0R7R0G300040-1-2
22.May.2013 Rev.006
Free Datasheet http://www.datasheet4u.com/

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