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PDF SUD40N02-3M3P Data sheet ( Hoja de datos )
| Número de pieza | SUD40N02-3M3P | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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New Product
SUD40N02-3m3P
Vishay Siliconix
N-Channel 20-V (D-S), 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
20 0.0033 at VGS = 10 V
0.0044 at VGS = 4.5 V
ID (A)a
40
40
Qg (Typ)
30 nC
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg Tested
APPLICATIONS
• Server
RoHS
COMPLIANT
TO-252
D
Drain Connected to Tab
GDS
Top View
Order Number:
SUD40N02-3m3P-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 100 °C
TA = 25 °C
ID
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TA = 100 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 100 °C
TA = 25 °C
TA = 100 °C
IDM
IS
PD
TJ, Tstg
Limit
20
± 20
40a
40a
24.4b
17.2b
100
40a
2.8b
79
39.5
3.3b
1.6b
- 55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb
Maximum Junction-to-Case
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
Steady State
Steady State
Symbol
RthJA
RthJC
Typical
37
1.5
Maximum
45
1.9
Unit
V
A
W
°C
Unit
°C/W
Document Number: 69819
S-80260-Rev. A, 04-Feb-08
www.vishay.com
1
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New Product
SUD40N02-3m3P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1000
30
Limited by rDS(on)*
100
24
10
1 ms
10 ms
DC 18
1
12
0.1
0.01
TA = 25 °C
Single Pulse
BVDSS
0.001
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which rDS(on) is specified
Safe Operating Area, Junction-to-Case
6
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature (°C)
Current Derating**, Junction-to-Ambient
150 4
120
90
60
Package Limited
30
3
2
1
0
0 25 50 75 100 125 150 175
TC - Case Temperature (°C)
Current Derating**, Junction-to-Case
100
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature (°C)
Power Derating**, Junction-to-Ambient
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature (°C)
Power Derating**, Junction-to-Case
Document Number: 69819
S-80260-Rev. A, 04-Feb-08
** The power dissipation PD is based on TJ(max) = 175 °C, using
junction-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is
used. It is used to determine the current rating, when this rating falls
below the package limit.
www.vishay.com
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SUD40N02-3M3P.PDF ] | |
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