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DTU40N06 데이터시트 PDF




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기능 N-Channel MOSFET
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DTU40N06 데이터시트, 핀배열, 회로
N-Channel 60-V (D-S) MOSFET
D56/
www.daysemi.jp
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
60 0.016 @ VGS = 10 V
TO-252
ID (A)
40
FEATURES
D TrenchFETr Power MOSFET
D 175_C Maximum Junction Temperature
D 100% Rg Tested
D
GDS
Top View
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle v 1%)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 125_C
L = 0.1 mH
TC = 25_C
TA = 25_C
VDS
VGS
ID
IDM
IS
IAR
EAR
PD
TJ, Tstg
60
"20
40
30
60
40
40
80
136b
3a
55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambienta
Junction-to-Case
Notes
a. Surface Mounted on 1” x1” FR4 Board.
b. See SOA curve for voltage derating.
t v 10 sec
Steady State
Symbol
RthJA
RthJC
Typical
15
40
0.85
Maximum
18
50
1.1
Unit
V
A
mJ
W
_C
Unit
_C/W
1
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DTU40N06 pdf, 반도체, 판매, 대치품
D56/
www.daysemi.jp
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.4
100
VGS = 10 V
2.0 ID = 40 A
10
1.6
Source-Drain Diode Forward Voltage
TJ = 150_C
1.2 1 TJ = 25_C
0.8
0.1
0.4
0.0
50 25 0
25 50 75 100 125 150 175
TJ Junction Temperature (_C)
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Case Temperature
50
0.01
0
0.3 0.6 0.9
VSD Source-to-Drain Voltage (V)
1.2
1000
Safe Operating Area
40
100
Limited by rDS(on)
30
10
20
10
1 TC = 25_C
Single Pulse
0
0 25 50 75 100 125 150 175
TC Case Temperature (_C)
0.1
0.1
1 10
VDS Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1 Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
104
103
102
101
Square Wave Pulse Duration (sec)
1
10
10 ms
100 ms
1 ms
10 ms
100 ms
1 s, dc
100
30
4
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