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PDF DTU4N60 Data sheet ( Hoja de datos )
| Número de pieza | DTU4N60 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Din-Tek | |
| Logotipo |  |
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Power MOSFET
D51/%56/
www.daysemi.jp
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
600
VGS = 10 V
39
10
19
Single
1.2
FEATURES
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30 V, VGS Rating
• Reduced Ciss, Coss, Crss
• Extremely High Frequency Operation
• Repetitive Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
TO-220AB
GD S
Top View
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 25 mH, Rg = 25 , IAS = 6.2 A (see fig. 12).
c. ISD 6.2 A, dI/dt 80 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
600
± 30
4
2.9
25
1.0
530
6.2
13
125
3.0
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
1
Free Datasheet http://www.datash
1 page  
5.0
4.0
3.5
3.0
2.5
2.0
1.0
0.0
25
91114_09
50 75 100 125
TC, Case Temperature (°C)
150
Fig. 9 - Maximum Drain Current vs. Case Temperature
D51/%56/
www.daysemi.jp
VDS
VGS
Rg
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
10
1
0 − 0.5
0.2
0.1 0.1
0.05
0.02
0.01
10-2
10-5
91114_11
PDM
Single Pulse
(Thermal Response)
10-4
10-3
10-2
0.1
t1, Rectangular Pulse Duration (s)
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
1 10
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet DTU4N60.PDF ] | |
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