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PDF FDP80N06 Data sheet ( Hoja de datos )
| Número de pieza | FDP80N06 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDP80N06
N-Channel MOSFET
60V, 80A, 10mΩ
Features
• RDS(on) = 8.5mΩ ( Typ.)@ VGS = 10V, ID = 40A
• Low gate charge(Typ. 57nC)
• Low Crss(Typ. 145pF)
• Fast switching
• Improved dv/dt capability
• RoHS compliant
September 2007
UniFETTM
tm
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies,active power factor
correction, electronic lamp ballast based on half bridge topology.
D
G DS
TO-220
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
S
Ratings
60
±20
80
65
320
480
80
17.6
4.5
176
1.17
-55 to +175
300
Ratings
0.85
62.5
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2007 Fairchild Semiconductor Corporation
FDP80N06 Rev. A
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
1 page  
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP80N06 Rev. A
5 www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDP80N06.PDF ] | |
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