(PDF) RT3K11M Datasheet - Composite Transistor

Número de pieza	RT3K11M
Descripción	Composite Transistor
Fabricantes	Isahaya Electronics
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No Preview Available ! RT3K11M Composite Transistor For high speed switching Silicon N-channel MOSFET DESCRIPTION RT3K11M is a composite transistor built with two INK0001AX chips in SC-88 package. FEATURE ・Input impedance is high, and not necessary to consider a drive electric current. ・Vth is low, and drive by low voltage is possible. Vth=0.6～1.2V ・Low on Resistance. Ron=3.5Ω(TYP) ・High speed switching. ・Small package for easy mounting. OUTLINE DRAWING 2.1 1.25 ① ② ③ ⑥ ⑤ ④ Unit：mm APPLICATION high speed switching , Analog switching ⑥ Tr.1 ⑤ ④ Tr.2 ①② ③ TERMINAL CONNECTOR ①：SOURCE1 ②：GATE1 ③：DRAIN2 ④：SOURCE2 ⑤：GATE2 ⑥:DRAIN1 JEITA：SC-88 MAXIMUM RATING (Ta=25℃) SYMBOL VDSS VGSS ID PD Tch Tstg PARAMETER Drain-source voltage Gate-source voltage Drain current Total power dissipation（Ta=25℃） Channel temperature Range of Storage temperature RATING 50 ±8 100 150 ＋125 -55～＋125 UNIT V V mA mW ℃ ℃ MARKING 654 .Ｋ. １１１23 ISAHAYA ELECTRONICS CORPORATION Free Datasheet http://www.datasheet4u.com/ 1 page

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PDF RT3K11M Data sheet ( Hoja de datos )