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PDF 2SD882H Data sheet ( Hoja de datos )
| Número de pieza | 2SD882H | |
| Descripción | NPN Silicon Power Transistor | |
| Fabricantes | SEMTECH | |
| Logotipo |  |
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ST 2SD882H
NPN Silicon Power Transistor
The transistor is subdivided into four groups, R,
Q, P and E, according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Current (pulse)
Total Power Dissipation(Ta = 25 OC)
Total Power Dissipation(TC = 25 OC)
Junction Temperature
Storage Temperature Range
E
C
B
TO-126 Plastic Package
Symbol
VCBO
VCEO
VEBO
IC
ICP
Ptot
Ptot
Tj
TS
Value
60
30
5
3
7
1
10
150
- 55 to + 150
Unit
V
V
V
A
A
W
W
OC
OC
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at VCE = 2 V, IC = 1 A
Current Gain Group
at VCE = 2 V, IC = 20 mA
Collector Cutoff Current
at VCB = 60 V
Emitter Cutoff Current
at VEB = 3 V
Collector Emitter Saturation Voltage
at IC = 2 A, IB = 0.2 A
Base Emitter Saturation Voltage
at IC = 2 A, IB = 0.2 A
Gain Bandwidth Product
at VCE = 5 V, IC = 0.1 A
Output Capacitance
at VCB = 10 V, f = 1 MHz
Symbol Min.
R
Q
P
E
hFE
hFE
hFE
hFE
hFE
ICBO
IEBO
VCEsat
VBEsat
fT
Cob
60
100
160
200
30
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
90
45
Max. Unit
120 -
200 -
320 -
400 -
--
1 µA
1 µA
0.5 V
2V
- MHz
- pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 13/09/2006
Free Datasheet http://www.datasheet4u.com/
1 page | ||
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| PDF Descargar | [ Datasheet 2SD882H.PDF ] | |
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