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PDF ST2SD882T Data sheet ( Hoja de datos )
| Número de pieza | ST2SD882T | |
| Descripción | NPN Silicon Power Transistor | |
| Fabricantes | SEMTECH | |
| Logotipo |  |
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ST 2SD882T
NPN Silicon Power Transistor
The transistor is subdivided into four groups, R, Q,
P and E, according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Current (pulse)
Total power dissipation (Ta = 25 OC)
Total power dissipation (Tc = 25 OC)
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
IC(pulse)
Ptot
Ptot
Tj
TS
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at VCE = 2 V, IC = 1 A
Current Gain Group
at VCE = 2 V, IC = 20 mA
Collector Cutoff Current
at VCB = 30 V
Emitter Cutoff Current
at VEB = 3 V
Output Capacitance
VCB = 10 V, f = 1 MHz
Base Emitter Saturation Voltage
at IC = 2 A, IB = 0.2 A
Collector Emitter Saturation Voltage
at IC = 2 A, IB = 0.2 A
Gain Bandwidth Product
at VCE = 5 V, IC = 0.1 A
R
Q
P
E
Symbol
hFE
hFE
hFE
hFE
hFE
ICBO
IEBO
Cob
VBE(sat)
VCE(sat)
fT
Min.
60
100
160
200
30
-
-
-
-
-
-
E
C
B
TO-126 Plastic Package
Value
40
30
5
3
7
1
10
150
-55 to +150
Unit
V
V
V
A
A
W
W
OC
OC
Typ.
Max.
Unit
- 120 -
- 200 -
- 320 -
- 400 -
---
- 1 µA
- 1 µA
45 - pF
- 2V
- 0.5 V
90 - MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/03/2006
Free Datasheet http://www.datasheet4u.com/
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| PDF Descargar | [ Datasheet ST2SD882T.PDF ] | |
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