(PDF) ST2SD966 Datasheet - NPN Silicon Epitaxial Planar Transistor

Número de pieza	ST2SD966
Descripción	NPN Silicon Epitaxial Planar Transistor
Fabricantes	SEMTECH
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No Preview Available ! ST 2SD966 NPN Silicon Epitaxial Planar Transistor for low-frequency power amplification and stroboscope. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Absolute Maximum Ratings (Ta = 25OC) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Peak Collector Current Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range TO-92 Plastic Package Weight approx. 0.19g Symbol VCBO VCEO VEBO ICP IC Pc Tj TS Value 40 20 7 8 5 1 150 -55 to +150 Unit V V V A A W OC OC SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 07/12/2002 Free Datasheet http://www.datasheet4u.com/ 1 page

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PDF ST2SD966 Data sheet ( Hoja de datos )