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부품번호 | K3878 기능 |
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기능 | 900V, 9A, N-channel MOS Field Effect Transistor | ||
제조업체 | Toshiba | ||
로고 | |||
전체 6 페이지수
2SK3878
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV)
2SK3878
Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
• Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
900
900
±30
9
27
150
778
9
15
150
−55 to 150
V
V
V
A
W
mJ
A
mJ
°C
°C
1. GATE
2. DRAIN (HEATSINK)
3. SOURCE
JEDEC
―
JEITA
SC-65
TOSHIBA
2−16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
0.833
50
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C
during use of the device.
Note 2: VDD = 90 V, Tch = 25°C, L = 17.6 mH, RG = 25 Ω, IAR = 9 A
Note 3: Repetitive rating: pulse width limited by max junction temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2
3
1 2010-05-06
Free Datasheet http://www.datasheet4u.com/
RDS (ON) − Tc
5
COMMON SOURCE
VGS = 10 V
PULSE TEST
4
3
ID = 9 A
2 4.5 2.3
1
0
−80 −40 0 40 80 120
CASE TEMPERATURE Tc (°C)
160
2SK3878
IDR − VDS
100
COMMON SOURCE
Tc = 25°C
PULSE TEST
10
1
10
51
0.1
0
3
−0.4
VGS = 0 V
−0.8
−1.2
−1.6
DRAIN−SOURCE VOLTAGE VDS (V)
10000
1000
C − VDS
Ciss
Coss
100
Crss
10 COMMON SOURCE
VGS = 0 V
f = 1 MHz
Tc = 25°C
1
0.1 1
10
DRAIN−SOURCE VOLTAGE VDS (V)
100
Vth − Tc
5
4
3
2
1 COMMON SOURCE
VDS = 10 V
ID = 1 mA
0 PULSE TEST
−80 −40
0
40
80 120
CASE TEMPERATURE Tc (°C)
160
PD − Tc
200
160
120
80
40
0
0 40 80 120 160 200
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
500
VDS
400
COMMON SOURCE
ID = 9 A
Tc = 25°C
PULSE TEST
20
16
300 100 12
200 VDD = 400 V
200 8
VGS
100 4
00
0 20 40 60 80 100
TOTAL GATE CHARGE Qg (nC)
4 2010-05-06
Free Datasheet http://www.datasheet4u.com/
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ K3878.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
K3870-01 | N-CHANNEL SILICON POWER MOSFET | Fuji |
K3878 | 900V, 9A, N-channel MOS Field Effect Transistor | Toshiba |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |