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부품번호 | 40T03GH 기능 |
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기능 | AP40T03GH | ||
제조업체 | Advanced Power Electronics | ||
로고 | |||
전체 6 페이지수
Advanced Power
Electronics Corp.
AP40T03GH/J
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Low Gate Charge
▼ Fast Switching
G
D
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP40T03GJ)
are available for low-profile applications.
BVDSS
RDS(ON)
ID
30V
25mΩ
28A
GD
S
TO-252(H)
GD
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+25
28
24
95
31.25
0.25
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
4
62.5
110
Units
℃/W
℃/W
℃/W
Data and specifications subject to change without notice
1
200811034
Free Datasheet http://www.datasheet4u.com/
AP40T03GH/J
12
I D =18A
9 V DS =10V
V DS =15V
V DS =20V
6
3
0
0369
Q G , Total Gate Charge (nC)
12
Fig 7. Gate Charge Characteristics
100
100us
10
1ms
T C =25 o C
Single Pulse
1
0.1
1
10ms
100ms
DC
10 100
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
f=1.0MHz
1000
C iss
C oss
C100 rss
10
1
8 15 22 29
V DS ,Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
t , Pulse Width (s)
1
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
Free Datasheet http://www.datasheet4u.com/
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
40T03GH | AP40T03GH | Advanced Power Electronics |
40T03GP | AP40T03GP | Advanced Power Electronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |