|
|
PDF K3880 Data sheet ( Hoja de datos )
| Número de pieza | K3880 | |
| Descripción | MOSFET ( Transistor ) - 2SK3880 | |
| Fabricantes | Toshiba | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de K3880 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
2SK3880
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV)
2SK3880
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.)
• High forward transfer admittance: |Yfs| = 5.2 S (typ.)
• Low leakage current: IDSS = 100μA (max) (VDS = 640 V)
• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAR
IAR
EAR
Tch
Tstg
Rating
800
800
±30
6.5
19.5
80
375
6.5
8
150
−55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-16F1B
Weight: 5.8 g (typ.)
2
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
Rth (ch-c)
Rth (ch-a)
Max
1.56
41.6
Unit
°C/W
°C/W
1
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 16.1 mH, RG = 25 Ω, IAR = 6.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
3
1 2005-01-18
Free Datasheet http://www.datasheet4u.com/
1 page  
2SK3880
rth − tw
10
1 Duty = 0.5
0.1
0.01
0.2
00..10
0.0
0.0
SINGLE PULSE
0.001
0.00001 0.0001
0.001
0.01
PDM
t
Ｔ
DUTY = t/T
Ｒ th (ch-c) = 1.56°C/W
0.1 1 10
PULSE WIDTH tw (S)
SAFE OPERATING AREA
100
ID MAX (PULSED)
10
ID MAX (CONTINUOUS)
Ｉ
100 µs*
1 ms*
1
DC OPERATION
Tc = 25°C
0.1 * SINGLE NONREPETITIVE PULSE
Tc = 25°C
Curves must be derated linearly with
increase in temperature
VDSS MAX
0.01
1
10 100
DRAIN−SOURCE VOLTAGE VDS (V)
1000
EAS – Tch
400
350
300
250
200
150
100
50
0
25 50 75 100 125
CHANNEL TEMPERATURE (INITIAL) Tch (°C)
150
15 V
−15 V
BVDSS
IAR
VDD
VDS
TEST CIRCUIT
WAVE FORM
RG = 25 Ω
VDD = 90 V, L = 16.1 mH
ΕAS
=
1
2
⋅L ⋅I2
⋅ ⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2005-01-18
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K3880.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| K3880 | MOSFET ( Transistor ) - 2SK3880 | Toshiba |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |