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부품번호 | KF12N60F 기능 |
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기능 | N CHANNEL MOS FIELD EFFECT TRANSISTOR | ||
제조업체 | KEC | ||
로고 | |||
전체 7 페이지수
SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
VDSS=600V, ID=12A
Drain-Source ON Resistance :
RDS(ON)=0.6 (Max) @VGS=10V
Qg(typ.)= 36nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KF12N60P KF12N60F
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
600
30
V
V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
ID
IDP
EAS
EAR
dv/dt
PD
12 12*
7.4 7.4*
33 33*
450
17
4.5
215 49.8
1.72 0.4
A
mJ
mJ
V/ns
W
W/
Maximum Junction Temperature
Storage Temperature Range
Tj
Tstg
150
-55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
0.58
Thermal Resistance,
Junction-to-Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
2.51 /W
62.5 /W
KF12N60P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KF12N60P
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8+_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
TO-220AB
KF12N60F
AC
E
LM
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
EQUIVALENT CIRCUIT
D
TO-220IS (1)
G
2008. 10. 29
S
Revision No : 2
1/7
Free Datasheet http://www.datasheet4u.com/
KF12N60P/F
104
103
102
101
0
Fig 7. C - VDS
Ciss
Coss
Crss
10 20 30 40
Drain - Source Voltage VDS (V)
Fig9. Safe Operation Area
(KF12N60P)
102
100µs
101 1ms
100
Operation in this
area is limited by RDS(ON)
10ms
100ms
DC
10-1
Tc= 25 C
Tj = 150 C
102 Single pulse
100
101
102
Drain - Source Voltage VDS (V)
103
Fig11. ID - Tj
14
12
10
8
6
4
2
0
25 50 75 100 125 150
Junction Temperature Tj ( C)
2008. 10. 29
Revision No : 2
Fig8. Qg- VGS
12
ID=12A
10
8
VDS = 480V
VDS = 300V
VDS = 120V
6
4
2
0
0 5 10 15 20 25 30 35 40
Gate - Charge Qg (nC)
Fig10. Safe Operation Area
(KF12N60F)
102
10µs
100µs
101
1ms
100
Operation in this
area is limited by RDS(ON)
10ms
100ms
10-1
Tc= 25 C
Tj = 150 C
102 Single pulse
100
101
102
Drain - Source Voltage VDS (V)
DC
103
4/7
Free Datasheet http://www.datasheet4u.com/
4페이지 KF12N60P/F
Fig17. Source - Drain Diode Reverse Recovery and dv /dt
IF
0.8 VDSS
10V
DUT
driver
VGS
VDS
ISD
(DUT)
IS
Body Diode Forword Current
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forword Voltage drop
2008. 10. 29
Revision No : 2
7/7
Free Datasheet http://www.datasheet4u.com/
7페이지 | |||
구 성 | 총 7 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
KF12N60F | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
KF12N60P | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |