|
|
PDF PD1503YVS Data sheet ( Hoja de datos )
| Número de pieza | PD1503YVS | |
| Descripción | Dual N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Niko-Sem | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de PD1503YVS (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
NIKO-SEM
Dual N-Channel Enhancement Mode Field
PD1503YVS
Effect Transistor
SOP-8
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS RDS(ON)
Q2 30V 15.8mΩ
Q1 30V 21mΩ
ID
9A
8A
1
2 Q1
3
Q2
4
8
7
6
5
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TA = 25 °C
TA = 70 °C
L = 0.1mH
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
Q2 Q1
30 30
±20 ±20
98
76
35 30
29 21
43 23
2
1.28
-55 to 150
UNITS
V
V
A
mJ
W
°C
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Reverse Current
Forward Voltage
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
VR = 25V
IF = 1A
SYMBOL
IR
VF
TYPICAL
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID = 250A
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250A
Schottky
0.05
0.45
UNITS
mA
V
MAXIMUM
62.5
UNITS
°C / W
LIMITS
UNIT
MIN TYP MAX
Q2 30
Q1 30
Q2 1 1.7
Q1 1 2
3
3
V
REV 0.9
Oct-28-2009
1
Free Datasheet http://www.datasheet4u.com/
1 page  
NIKO-SEM
Dual N-Channel Enhancement Mode Field
PD1503YVS
Effect Transistor
SOP-8
Halogen-Free & Lead-Free
Safe Operating Area
100
Operation in This
Area is Lim ited by
RDS(ON)
↓10
1
NOTE :
0.1 1.VGS= 10V
2.TA=25˚ C
3.RθJA = 62.5˚ C/W
4.Single Pulse
0.01
0.1
1
10
VDS, Drain-To-Source Voltage(V)
100us
1m s
10m s
100m s
1S
10S
DC
100
Single Pulse Maximum Power Dissipation
100
90
80 SINGLE PULSE
RθJA = 62.5˚ C/W
70 TA=25˚ C
60
50
40
30
20
10
0
0.0001
0.001
0.01
0.1
Single Pulse Time(s)
1
10
1.00E+01
Transient Thermal Response Curve
1.00E+00
1.00E-01
1.00E-02
1.E-06
1.E-05
Duty Cycle=0.5
0.2
0.1
0.05
0.02
0.01
single Pluse
1.E-04
1.E-03
1.E-02
1.E-01
T1 , Square Wave Pulse Duration[sec]
Note
1.Duty cycle, D= t1 / t2
2.RthJA = 62.5 oC/W
3.TJ-TA = P*RthJC(t)
4.RthJA(t) = r(t)*RthJA
1.E+00
1.E+01
1.E+02
REV 0.9
Oct-28-2009
5
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet PD1503YVS.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PD1503YVS | Dual N-Channel Enhancement Mode MOSFET |  UNIKC |
| PD1503YVS | Dual N-Channel Enhancement Mode Field Effect Transistor | Niko-Sem |
| PD1503YVS-A | Dual N-Channel Enhancement Mode MOSFET | UNIKC |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |