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PDF MC3424DV Data sheet ( Hoja de datos )
| Número de pieza | MC3424DV | |
| Descripción | N-Channel Logic Level MOSFET | |
| Fabricantes | Freescale | |
| Logotipo |  |
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Freescale
Si 34 24 DV/ MC34 24 DV
N-Channel Logic Level MOSFET
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low rDS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and power
management in portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
30 0.027 @ VGS = 10 V
0.035 @ VGS = 4.5V
ID (A)
6.3
5.5
• Low rDS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
TSOP-6 saves board space
• Fast switching speed
• High performance trench technology
16
25
34
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
Continuous Source Current (Diode Conduction)a
Power Dissipationa
Operating Junction and Storage Temperature Range
VDS
VGS
TA=25oC
TA=70oC
ID
30
±20
6.3
5.2
IDM ±20
IS
TA=25oC
TA=70oC
PD
1.3
1.6
1.0
TJ, Tstg -55 to 150
V
A
A
W
oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t <= 5 sec
Symbol Maximum Units
RT HJA
78.0
oC/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
1
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1 page  
Freescale
Si 34 24 DV/ MC34 24 DV
Package Information
TSOP-6: 6LEAD
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5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet MC3424DV.PDF ] | |
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