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PDF P11NM60FP Data sheet ( Hoja de datos )
| Número de pieza | P11NM60FP | |
| Descripción | STP11NM60FP | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de P11NM60FP (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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STP11NM60 - STP11NM60FP
STB11NM60 - STB11NM60-1
N-CHANNEL 600V - 0.4Ω-11A TO-220/TO-220FP/D2PAK/I2PAK
MDmesh™Power MOSFET
TYPE
VDSS
RDS(on)
ID
STP11NM60
STP11NM60FP
STB11NM60
STB11NM60-1
600 V
600 V
600 V
600 V
< 0.45 Ω
< 0.45 Ω
< 0.45 Ω
< 0.45 Ω
11 A
11 A
11 A
11 A
TYPICAL RDS(on) = 0.4Ω
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO
Insulation Winthstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
May 2003
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D2PAK
123
I2PAK
INTERNAL SCHEMATIC DIAGRAM
Value
STP(B)11NM60(-1)
STP11NM60FP
600
600
±30
11 11 (*)
7 7 (*)
44 44 (*)
160 35
1.28
0.28
15
-- 2500
–65 to 150
150
(*)Limited only by maximum temperature allowed
(1)ISD<11A, di/dt<400A/µs, VDD<V(BR)DSS, TJ<TJMAX
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
1/12
Free Datasheet http://www.datasheet4u.com/
1 page  
STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/12
Free Datasheet http://www.datasheet4u.com/
5 Page 
STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TAPE MECHANICAL DATA
DIM.
A0
B0
D
D1
E
F
K0
P0
P1
P2
R
T
W
mm inch
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
1.5 1.6 0.059 0.063
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
11.4 11.6 0.449 0.456
4.8 5.0 0.189 0.197
3.9 4.1 0.153 0.161
11.9 12.1 0.468 0.476
1.9 2.1 0.075 0.082
50 1.574
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
* on sales type
REEL MECHANICAL DATA
DIM.
A
B
C
D
G
N
T
mm inch
MIN. MAX. MIN. MAX.
330 12.992
1.5 0.059
12.8 13.2 0.504 0.520
20.2
0795
24.4 26.4 0.960 1.039
100 3.937
30.4 1.197
BASE QTY
1000
BULK QTY
1000
11/12
Free Datasheet http://www.datasheet4u.com/
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet P11NM60FP.PDF ] | |
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