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PDF G7S313UPBF Data sheet ( Hoja de datos )
| Número de pieza | G7S313UPBF | |
| Descripción | IRG7S313UPBF | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PDP TRENCH IGBT
PD - 97402A
IRG7S313UPbF
Features
l Advanced Trench IGBT Technology
l Optimized for Sustain and Energy Recovery
circuits in PDP applications
l Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
l High repetitive peak current capability
l Lead Free package
Key Parameters
VCE min
VCE(ON) typ. @ IC = 20A
IRP max @ TC= 25°C
TJ max
330
1.35
160
150
C
V
V
A
°C
G
E
n-channel
CE
G
D2Pak
IRG7S313UPbF
G
Gate
C
Collector
E
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
VGE
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
cRepetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Thermal Resistance
Parameter
dRθJC Junction-to-Case
Max.
±30
40
20
160
78
31
0.63
-40 to + 150
300
Typ.
–––
Max.
1.6
Units
V
A
W
W/°C
°C
Units
°C/W
www.irf.com
1
9/11/09
Free Datasheet http://www.datasheet4u.net/
1 page  
10000
1000
Cies
IRG7S313UPbF
20
ID= 12A
16 VDS= 240V
VDS= 150V
12 VDS= 60V
8
100
Coes
4
10
0
Cres
100
0
200 0 10 20 30 40
VCE (V)
QG Total Gate Charge (nC)
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
10
1 D = 0.50
0.1
0.01
0.001
1E-006
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ
τJ
τ1
τ1
R1R1
CiC=iτi/Ri/iRi
R2R2
τ2
τ2
R3R3
R4R4
τC
Ri (°C/W)
0.018158
τι (sec)
0.000006
τ3 τ4 τ 0.557463 0.00017
τ3 τ4 0.666413 0.001311
0.305061 0.006923
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
Free Datasheet http://www.datasheet4u.net/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet G7S313UPBF.PDF ] | |
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