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BD9215FV PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BD9215FV
기능 DC-AC Inverter Control IC
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BD9215FV 데이터시트, 핀배열, 회로
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STRUCTURE
Silicon Monolithic Integrated Circuit
NAME OF PRODUCT
DC-AC Inverter Control IC
TYPE BD9215F、BD9215FV
FUNCTION
・ 36V High voltage process
・ 1ch control with Full-Bridge
・ Lamp current and voltage sense feed back control
・ Sequencing easily achieved with Soft Start Control
・ Short circuit protection with Timer Latch
・ Under Voltage Lock Out
・ Mode-selectable the operating or stand-by mode by stand-by pin
・ For master IC, Synchronous operating with BD9898F/FV
・ BURST mode controlled by PWM and DC input
・ Output liner Control by external DC voltage
○Absolute Maximum Ratings(Ta = 25℃)
Parameter
Supply Voltage
BST pin
SW pin
BST-SW voltage difference
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
Power Dissipation
Symbol
VCC
BST
SW
BST-SW
Topr
Tstg
Tjmax
Pd
Limits
36
40
36
15
-40~+85
-55~+150
+150
749*1(BD9215F)
1062*2(BD9215FV)
Unit
V
V
V
V
mW
*1Pd derate at 6.0mW/℃ for temperature above Ta = 25℃ (When mounted on a PCB 70.0mm×70.0mm×1.6mm)
*2Pd derate at 8.5mW/℃ for temperature above Ta = 25℃ (When mounted on a PCB 70.0mm×70.0mm×1.6mm)
〇Operating condition
Parameter
Symbol
Limits
Unit
Supply voltage
BST voltage
BST-SW voltage difference
DRIVER frequency
BCT oscillation frequency
VCC
BST
BST-SW
FOUT
fBCT
16.0~30.0 ※
5.0~37.5
5.0~14.0
30~110
0.05~1.00
V
V
V
kHz
kHz
Status of this document
For Operation condition of Supply voltage, Please see NOTE FOR USE(4page), more information.
The Japanese version of this document is the official specification.
Please use the translation version of this document as a reference to expedite understanding of the official version.
If these are any uncertainty in translation version of this document, official version takes priority.
Downloaded from Elcodis.com electronic components distributor
REV. C
Free Datasheet http://www.datasheet4u.net/




BD9215FV pdf, 반도체, 판매, 대치품
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NOTE FOR USE
1. This product is produced with strict quality control, but might be destroyed if used beyond its absolute
maximum ratings. Once IC is destroyed, failure mode will be difficult to determine, like short mode or
open mode. Therefore, physical protection countermeasure, like fuse is recommended in case operating
conditions go beyond the expected absolute maximum ratings.
2. The circuit functionality is guaranteed within of ambient temperature operation range as long as it is
within recommended operating range. The standard electrical characteristic values cannot be guaranteed
at other voltages in the operating ranges, however the variation will be small. When it is used in between
STB-UVLO Diode short etc., the IC can operate VCC9V. Please refer to a Technical Note in detail.
3. Mounting failures, such as misdirection or miscounts, may harm the device.
4. A strong electromagnetic field may cause the IC to malfunction.
5. The GND pin should be the location within ±0.3V compared with the PGND pin. ALL Pin (except BST1, BST2,
HN1, HN2,) Voltage should be under VCC voltage +0.3V
6. BD9215F, BD9215FV incorporate a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown
circuit (TSD circuit) is designed only to shut the IC off to prevent runaway thermal operation. It is not
designed to protect the IC or guarantee its operation of the thermal shutdown circuit is assumed.
7. When modifying the external circuit components, make sure to leave an adequate margin for external
components actual value and tolerance as well as dispersion of the IC.
8. About the external FET, the parasitic Capacitor may cause the gate voltage to change, when the drain voltage
is switching. Make sure to leave adequate margin for this IC variation.
9. Under operating CP charge (under error mode) analog dimming and burst dimming are not operate.
10. Under operating Slow Start Control (SS is less than 1.5V), It does not operate Timer Latch.
11. By STB voltage, BD9215F, BD9215FV are changed to 2 states. Therefore, do not input STB pin voltage between
one state and the other state (0.8~2.0V).
12. The pin connected a connector need to connect to the resistor for electrical surge destruction.
13. This IC is a monolithic IC which (as shown is Fig-1) has P+ substrate and between the various pins.
A P-N junction is formed from this P layer of each pin. For example, the relation between each potential
is as follows,
○(When GND > PinB and GND > PinA, the P-N junction operates as a parasitic diode.)
○(When PinB > GND > PinA, the P-N junction operates as a parasitic transistor.)
Parasitic diodes can occur inevitably in the structure of the IC. The operation of parasitic diodes can
result in mutual interference among circuits as well as operation faults and physical damage. Accordingly
you must not use methods by which parasitic diodes operate, such as applying a voltage that is lower than
the GND (P substrate) voltage to an input pin.
Resistance
(PinA)
P
P
N
P
P substrate
GND
Parasitic diode
Transistor (NPN)
(PinB)
B
C
E
N
GND
N
P substrate
GND
Parasitic diode
N
(PinB)
(PinA)
Parasitic diode
B C
E
GND
GND
Other adjacent components Parasitic diode
Fig-1 Simplified structure of a Bipolar IC
Downloaded from Elcodis.com electronic components distributor
REV. C
Free Datasheet http://www.datasheet4u.net/

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관련 데이터시트

부품번호상세설명 및 기능제조사
BD9215F

DC-AC Inverter Control IC

Rohm
Rohm
BD9215FV

DC-AC Inverter Control IC

Rohm
Rohm

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