|
|
|
부품번호 | 11N80C3 기능 |
|
|
기능 | SPP11N80C3 | ||
제조업체 | Infineon | ||
로고 | |||
전체 13 페이지수
SPP11N80C3
SPA11N80C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
VDS
RDS(on)
ID
800 V
0.45 Ω
11 A
• Periodic avalanche rated
PG-TO220-3-31 PG-TO220
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
P-TO220-3-31
3
12
• PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
SPP11N80C3
SPA11N80C3
Package
Ordering Code
PG-TO220 Q67040-S4438
PG-TO220-3-31 SP000216320
Marking
11N80C3
11N80C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=2.2A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=11A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
Value
SPP
SPA
11 111)
7.1 7.11)
33 33
470 470
Unit
A
A
mJ
0.2 0.2
11 11
±20 ±20
±30 ±30
156 41
-55...+150
A
V
W
°C
Rev. 2.4
Page 1
2005-08-24
Free Datasheet http://www.datasheet4u.net/
SPP11N80C3
SPA11N80C3
Electrical Characteristics
Parameter
Symbol Conditions
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of reverse
recovery current
IS TC=25°C
ISM
VSD
trr
Qrr
Irrm
dirr/dt
VGS=0V, IF=IS
VR=640V, IF=IS ,
diF/dt=100A/µs
Tj=25°C
min.
-
Values
typ. max.
- 11
Unit
A
- - 33
- 1 1.2 V
- 550 - ns
- 10 - µC
- 33 - A
- 1000 - A/µs
Typical Transient Thermal Characteristics
Symbol
Value
Unit Symbol
SPP
SPA
Rth1
Rth2
Rth3
Rth4
Rth5
Rth6
0.012
0.023
0.043
0.154
0.175
0.071
0.012
0.023
0.043
0.176
0.371
2.522
K/W
Cth1
Cth2
Cth3
Cth4
Cth5
Cth6
Value
SPP
SPA
0.0002493 0.0002493
0.0009399 0.0009399
0.001298 0.001298
0.003617 0.003617
0.009186 0.00802
0.074
0.412
Unit
Ws/K
Ptot (t)
Tj Rth1
C th1
C th 2
R th,n
Tcase External Heatsink
C th,n
Tamb
Rev. 2.4
Page 4
2005-08-24
Free Datasheet http://www.datasheet4u.net/
4페이지 9 Typ. drain-source on resistance
RDS(on)=f(ID)
parameter: Tj=150°C, VGS
3
Ω
4V
2.6 4.5V
2.4 5V
2.2
5.5V
2
1.8
6V
1.6
6.5V
1.4
1.2 20V
1
0.80 2 4 6 8 10 12 14 A 18
ID
11 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
35
A 25°C
SPP11N80C3
SPA11N80C3
10 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 7.1 A, VGS = 10 V
2.6 SPP11N80C3
Ω
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6 98%
0.4 typ
0.2
0-60 -20 20 60 100
12 Typ. gate charge
VGS = f (QGate)
parameter: ID = 11 A pulsed
16 SPP11N80C3
V
°C 180
Tj
25
20
15 150°C
10
5
12
10
8
6
4
2
00 2 4 6 8 10 12 14 16 V 20
VGS
Rev. 2.4
Page 7
00
0,2 VDS max
0,8 VDS max
20 40 60 80 nC 110
QGate
2005-08-24
Free Datasheet http://www.datasheet4u.net/
7페이지 | |||
구 성 | 총 13 페이지수 | ||
다운로드 | [ 11N80C3.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
11N80C3 | SPP11N80C3 | Infineon |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |