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HGT1N30N60A4D 데이터시트 PDF




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부품번호 HGT1N30N60A4D 기능
기능 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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HGT1N30N60A4D 데이터시트, 핀배열, 회로
Data Sheet
HGT1N30N60A4D
December 2001
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGT1N30N60A4D is a MOS gated high voltage
switching device combining the best features of a MOSFETs
and a bipolar transistor. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. This
IGBT is ideal for many high voltage switching applications
operating at high frequencies where low conduction losses
are essential. This device has been optimized for high
frequency switch mode power supplies.
Formerly Developmental Type TA49345.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGT1N30N60A4D
SOT-227
30N60A4D
NOTE: When ordering, use the entire part number.
Features
• 100kHz Operation At 390V, 20A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . . 58ns at TJ = 125oC
• Low Conduction Loss
Symbol
C
G
E
Packaging
JEDEC STYLE SOT-227B
GATE
EMITTER
TAB
(ISOLATED)
COLLECTOR EMITTER
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2001 Fairchild Semiconductor Corporation
HGT1N30N60A4D Rev. B




HGT1N30N60A4D pdf, 반도체, 판매, 대치품
HGT1N30N60A4D
Typical Performance Curves Unless Otherwise Specified (Continued)
50
DUTY CYCLE < 0.5%, VGE = 12V
PULSE DURATION = 250µs
40
50
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs
40
30 30
20
TJ = 125oC
10
TJ = 150oC
TJ = 25oC
0
0 0.5 1.0 1.5 2.0 2.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
20
TJ = 125oC
10
TJ = 150oC
TJ = 25oC
0
0 0.5 1.0 1.5 2.0 2.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
3500
3000
RG = 3, L = 200µH, VCE = 390V
2500
TJ = 125oC, VGE = 12V, VGE = 15V
2000
1500
1000
500
0
0
TJ = 25oC, VGE = 12V, VGE = 15V
10 20 30 40 50
ICE, COLLECTOR TO EMITTER CURRENT (A)
60
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
1400
RG = 3, L = 200µH, VCE = 390V
1200
1000
800
TJ = 125oC, VGE = 12V OR 15V
600
400
200
0
0
TJ = 25oC, VGE = 12V OR 15V
10 20 30 40 50
ICE, COLLECTOR TO EMITTER CURRENT (A)
60
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
34
RG = 3, L = 200µH, VCE = 390V
32 TJ = 25oC, TJ = 125oC, VGE = 12V
30
28
26
24
22 TJ = 25oC, TJ = 125oC, VGE = 15V
20
0
10 20 30 40 50
ICE, COLLECTOR TO EMITTER CURRENT (A)
60
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
100
RG = 3, L = 200µH, VCE = 390V
80
TJ = 125oC, VGE = 15V, VGE = 12V
60
TJ = 25oC, VGE = 12V
40
20
0
0
TJ = 25oC, VGE = 15V
10 20 30 40 50
ICE, COLLECTOR TO EMITTER CURRENT (A)
60
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
HGT1N30N60A4D Rev. B

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HGT1N30N60A4D 전자부품, 판매, 대치품
HGT1N30N60A4D
Typical Performance Curves Unless Otherwise Specified (Continued)
100
0.50
0.20
10-1 0.10
0.05
0.02
0.01
10-210-5
SINGLE PULSE
10-4
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
PD
10-3
10-2
10-1
100
t1, RECTANGULAR PULSE DURATION (s)
t1
t2
FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
101
HGT1N30N60A4D
DIODE TA49373
RG = 3
HGT1N30N60A4D
L = 200µH
+
VDD = 390V
-
FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT
90%
VGE
VCE
ICE
EOFF
10%
EON2
90%
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 25. SWITCHING TEST WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGT1N30N60A4D Rev. B

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HGT1N30N60A4D

600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Fairchild Semiconductor
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