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Número de pieza | P80NF10 | |
Descripción | STP80NF10 | |
Fabricantes | STMicroelectronics | |
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Hay una vista previa y un enlace de descarga de P80NF10 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! STP80NF10
STP80NF10FP
N-CHANNEL 100V - 0.012Ω - 80A TO-220/TO-220FP
LOW GATE CHARGE STripFET™II POWER MOSFET
TYPE
VDSS
RDS(on)
STP80NF10
STP80NF10FP
100 V < 0.015 Ω
100 V < 0.015 Ω
s TYPICAL RDS(on) = 0.012Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
ID
80 A
38 A
3
2
1
3
2
1
DESCRIPTION
This Power MOSFET series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID(*) Drain Current (continuous) at TC = 25°C
ID
IDM (l)
Drain Current (continuous) at TC = 100°C
Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
VISO
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
(*) Limited by Package
September 2002
Value
STP80NF10 STP80NF10FP
100
100
±20
80 38
66 27
320 152
300 45
2 0.3
9
360
- 2500
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
V
– 55 to 175
°C
(1) ISD ≤80A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj = 25°C, ID = 80A, VDD = 50V
1/9
Free Datasheet http://www.datasheet4u.net/
1 page Gate Charge vs Gate-source Voltage
STP80NF10/STP80NF10FP
Capacitance Variations
Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
Free Datasheet http://www.datasheet4u.net/
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet P80NF10.PDF ] |
Número de pieza | Descripción | Fabricantes |
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