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PDF HGTH20N40E1D Data sheet ( Hoja de datos )
| Número de pieza | HGTH20N40E1D | |
| Descripción | 20A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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April 1995
HGTH20N40C1D, HGTH20N40E1D,
HGTH20N50C1D, HGTH20N50E1D
20A, 400V and 500V N-Channel IGBTs
with Anti-Parallel Ultrafast Diodes
Features
Package
• 20A, 400V and 500V
• VCE(ON) 2.5V Max.
• TFALL 1µs, 0.5µs
• Low On-State Voltage
JEDEC TO-218AC
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
GATE
• Fast Switching Speeds
• High Input Impedance
• Anti-Parallel Diode
Applications
• Power Supplies
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
• Motor Drives
• Protective Circuits
Description
The HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D,
and HGTH20N50E1D are n-channel enhancement-mode
insulated gate bipolar transistors (IGBTs) designed for high
voltage, low on-dissipation applications such as switching
regulators and motor drivers. They feature a discrete anti-
parallel diode that shunts current around the IGBT in the
reverse direction without introducing carriers into the
depletion region. These types can be operated directly from
low power integrated circuits.
G
E
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTH20N40C1D TO-218AC
G20N40C1D
HGTH20N40E1D TO-218AC
G20N40E1D
HGTH20N50C1D TO-218AC
G20N50C1D
HGTH20N50E1D TO-218AC
G20N50E1D
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCES
Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM
Diode Forward Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . IF25
at TJ = +90oC. . . . . . . . . . . . . . . . . . . . . . IF90
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . TJ, TSTG
HGTH20N40C1D
HGTH20N40E1D
400
400
±20
20
35
35
20
100
0.8
-55 to +150
HGTH20N50C1D
HGTH20N50E1D
500
500
±20
20
35
35
20
100
0.8
-55 to +150
UNITS
V
V
V
A
A
A
A
W
W/oC
oC
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-76
File Number 2271.4
1 page  
HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D
Typical Performance Curves (Continued)
1000
900
800
VGE = 10V, VCE(CLP) = 300V
L = 25µH, RG = 25Ω
700
20A, 40E1D/50E1D
600
500 20A, 40C1D/50C1D
400
300 10A, 40E1D/50E1D
200
10A, 40C1D/50C1D
100
0
+25
+50
+75
+100
+125
+150
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 13. TYPICAL CLAMPED INDUCTIVE TURN-OFF
SWITCHING LOSS/CYCLE
100
500 10
VCC = BVCES
375 GATE
EMITTER
VOLTAGE
250
VCC = 0.25 BVCES
RL = 25Ω
IG(REF) = 0.76mA
125 VGE = 10V
COLLECTOR-EMITTER VOLTAGE
8
6
4
2
0
IG(REF)
20
IG(ACT)
TIME (µs)
IG(REF)
80
IG(ACT)
0
NOTE: For Turn-Off gate currents in excess of 3mA. VCE Turn-Off
is not accurately represented by this normalization.
FIGURE 14. NORMALIZED SWITCHING WAVEFORMS AT CON-
STANT GATE CURRENT (REFER TO APPLICATION
NOTES AN7254 AND AN7260)
TYPICAL REVERSE RECOVERY TIME
10
TJ = +150oC
TJ = +100oC
1.0 TJ = +25oC
TJ = -50oC
0.1
0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8
VEC, EMITTER-COLLECTOR VOLTAGE (V)
2.0
FIGURE 15. TYPICAL DIODE EMITTER-COLLECTOR
VOLTAGE vs CURRENT
60
50
40
dIEC/dt ≥ 100A/µs
30 VR = 30V, TJ = +25oC
20
10
0 2 4 6 8 10 12 14 16 18 20
IEC, EMITTER-COLLECTOR CURRENT (A)
FIGURE 16. TYPICAL DIODE REVERSE RECOVERY TIME
Test Circuit
1/RG = 1/RGEN + 1/RGE
RGEN = 50Ω
20V
0V
RL = 4Ω
L = 25µH
VCC
VCE(CLP) =
300V
100V
RGE = 50Ω
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT
3-80
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HGTH20N40E1D.PDF ] | |
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