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HGTH20N50C1D 데이터시트 PDF




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부품번호 HGTH20N50C1D 기능
기능 20A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
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HGTH20N50C1D 데이터시트, 핀배열, 회로
April 1995
HGTH20N40C1D, HGTH20N40E1D,
HGTH20N50C1D, HGTH20N50E1D
20A, 400V and 500V N-Channel IGBTs
with Anti-Parallel Ultrafast Diodes
Features
Package
• 20A, 400V and 500V
• VCE(ON) 2.5V Max.
• TFALL 1µs, 0.5µs
• Low On-State Voltage
JEDEC TO-218AC
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
GATE
• Fast Switching Speeds
• High Input Impedance
• Anti-Parallel Diode
Applications
• Power Supplies
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
• Motor Drives
• Protective Circuits
Description
The HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D,
and HGTH20N50E1D are n-channel enhancement-mode
insulated gate bipolar transistors (IGBTs) designed for high
voltage, low on-dissipation applications such as switching
regulators and motor drivers. They feature a discrete anti-
parallel diode that shunts current around the IGBT in the
reverse direction without introducing carriers into the
depletion region. These types can be operated directly from
low power integrated circuits.
G
E
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTH20N40C1D TO-218AC
G20N40C1D
HGTH20N40E1D TO-218AC
G20N40E1D
HGTH20N50C1D TO-218AC
G20N50C1D
HGTH20N50E1D TO-218AC
G20N50E1D
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCES
Collector-Gate Voltage RGE = 1M. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM
Diode Forward Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . IF25
at TJ = +90oC. . . . . . . . . . . . . . . . . . . . . . IF90
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . TJ, TSTG
HGTH20N40C1D
HGTH20N40E1D
400
400
±20
20
35
35
20
100
0.8
-55 to +150
HGTH20N50C1D
HGTH20N50E1D
500
500
±20
20
35
35
20
100
0.8
-55 to +150
UNITS
V
V
V
A
A
A
A
W
W/oC
oC
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-76
File Number 2271.4




HGTH20N50C1D pdf, 반도체, 판매, 대치품
HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D
Typical Performance Curves (Continued)
2700
f = 0.1MHz
2250
1800
1350
CISS
900
COSS
450
CRSS
0 10 20 30 40 50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 7. CAPACITANCE vs COLLECTOR-TO-EMITTER
VOLTAGE
400
IC = 20A, VGE = 10V, VCE(CLP) = 300V
L = 25µH, RG = 25
300
200
3.00
2.75
2.50
2.25
IC = 20A, VGE = 10V
IC = 20A, VGE = 15V
2.00
1.75
IC = 10A, VGE = 10V
1.50
+25
IC = 10A, VGE = 15V
+50
+75
+100
+125
TJ, JUNCTION TEMPERATURE (oC)
+150
FIGURE 8. TYPICAL VCE(ON) vs TEMPERATURE
WOFF = IC * VCEdt
VGE
IC
VCE
100
0
+25
+50 +75 +100 +125
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. TYPICAL TURN-OFF DELAY TIME
+150
800
700 IC = 10A, VGE = 10V, VCE(CLP) = 300V
L = 25µH, RG = 25
600
40E1D/50E1D
500
400
40C1D/50C1D
300
200
100
0
+25
+50
+75
+100
+125
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 11. TYPICAL FALL TIME (IC = 10A)
+150
FIGURE 10. TYPICAL INDUCTIVE SWITCHING WAVEFORMS
800
IC = 20A, VGE = 10V, VCE(CLP) = 300V
700 L = 25µH, RG = 25
600
500 40E1D/50E1D
400
40C1D/50C1D
300
200
100
0
+25
+50
+75
+100
+125
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 12. TYPICAL FALL TIME (IC = 20A)
+150
3-79

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HGTH20N50C1

15A/ 20A/ 400V and 500V N-Channel IGBTs

Intersil Corporation
Intersil Corporation
HGTH20N50C1D

20A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes

Intersil Corporation
Intersil Corporation

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