|
|
|
부품번호 | HGTH20N50E1D 기능 |
|
|
기능 | 20A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes | ||
제조업체 | Intersil Corporation | ||
로고 | |||
전체 6 페이지수
April 1995
HGTH20N40C1D, HGTH20N40E1D,
HGTH20N50C1D, HGTH20N50E1D
20A, 400V and 500V N-Channel IGBTs
with Anti-Parallel Ultrafast Diodes
Features
Package
• 20A, 400V and 500V
• VCE(ON) 2.5V Max.
• TFALL 1µs, 0.5µs
• Low On-State Voltage
JEDEC TO-218AC
COLLECTOR
(FLANGE)
EMITTER
COLLECTOR
GATE
• Fast Switching Speeds
• High Input Impedance
• Anti-Parallel Diode
Applications
• Power Supplies
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
• Motor Drives
• Protective Circuits
Description
The HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D,
and HGTH20N50E1D are n-channel enhancement-mode
insulated gate bipolar transistors (IGBTs) designed for high
voltage, low on-dissipation applications such as switching
regulators and motor drivers. They feature a discrete anti-
parallel diode that shunts current around the IGBT in the
reverse direction without introducing carriers into the
depletion region. These types can be operated directly from
low power integrated circuits.
G
E
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTH20N40C1D TO-218AC
G20N40C1D
HGTH20N40E1D TO-218AC
G20N40E1D
HGTH20N50C1D TO-218AC
G20N50C1D
HGTH20N50E1D TO-218AC
G20N50E1D
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCES
Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM
Diode Forward Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . IF25
at TJ = +90oC. . . . . . . . . . . . . . . . . . . . . . IF90
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . TJ, TSTG
HGTH20N40C1D
HGTH20N40E1D
400
400
±20
20
35
35
20
100
0.8
-55 to +150
HGTH20N50C1D
HGTH20N50E1D
500
500
±20
20
35
35
20
100
0.8
-55 to +150
UNITS
V
V
V
A
A
A
A
W
W/oC
oC
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-76
File Number 2271.4
HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D
Typical Performance Curves (Continued)
2700
f = 0.1MHz
2250
1800
1350
CISS
900
COSS
450
CRSS
0 10 20 30 40 50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 7. CAPACITANCE vs COLLECTOR-TO-EMITTER
VOLTAGE
400
IC = 20A, VGE = 10V, VCE(CLP) = 300V
L = 25µH, RG = 25Ω
300
200
3.00
2.75
2.50
2.25
IC = 20A, VGE = 10V
IC = 20A, VGE = 15V
2.00
1.75
IC = 10A, VGE = 10V
1.50
+25
IC = 10A, VGE = 15V
+50
+75
+100
+125
TJ, JUNCTION TEMPERATURE (oC)
+150
FIGURE 8. TYPICAL VCE(ON) vs TEMPERATURE
WOFF = ∫ IC * VCEdt
VGE
IC
VCE
100
0
+25
+50 +75 +100 +125
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. TYPICAL TURN-OFF DELAY TIME
+150
800
700 IC = 10A, VGE = 10V, VCE(CLP) = 300V
L = 25µH, RG = 25Ω
600
40E1D/50E1D
500
400
40C1D/50C1D
300
200
100
0
+25
+50
+75
+100
+125
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 11. TYPICAL FALL TIME (IC = 10A)
+150
FIGURE 10. TYPICAL INDUCTIVE SWITCHING WAVEFORMS
800
IC = 20A, VGE = 10V, VCE(CLP) = 300V
700 L = 25µH, RG = 25Ω
600
500 40E1D/50E1D
400
40C1D/50C1D
300
200
100
0
+25
+50
+75
+100
+125
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 12. TYPICAL FALL TIME (IC = 20A)
+150
3-79
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ HGTH20N50E1D.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
HGTH20N50E1 | 15A/ 20A/ 400V and 500V N-Channel IGBTs | Intersil Corporation |
HGTH20N50E1D | 20A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes | Intersil Corporation |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |