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PDF HGTP10N120BN Data sheet ( Hoja de datos )
| Número de pieza | HGTP10N120BN | |
| Descripción | 35A/ 1200V/ NPT Series N-Channel IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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Data Sheet
HGTG10N120BN, HGTP10N120BN,
HGT1S10N120BNS
August 2002
35A, 1200V, NPT Series N-Channel IGBT
The HGTG10N120BN, HGTP10N120BN and
HGT1S10N120BNS are Non-Punch Through (NPT) IGBT
designs. They are new members of the MOS gated high
voltage switching IGBT family. IGBTs combine the best
features of MOSFETs and bipolar transistors. This device
has the high input impedance of a MOSFET and the low on-
state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49290.
Ordering Information
PART NUMBER
HGTG10N120BN
PACKAGE
TO-247
BRAND
G10N120BN
HGTP10N120BN
HGT1S10N120BNS
TO-220AB
TO-263AB
10N120BN
10N120BN
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the TO-263AB variant in tape and reel, e.g.
HGT1S10N120BNST.
Symbol
C
G
E
Features
• 35A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
• Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.fairchildsemi.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Packaging
JEDEC STYLE TO-247
COLLECTOR
(FLANGE)
E
C
G
JEDEC TO-220AB (ALTERNATE VERSION)
COLLECTOR
(FLANGE)
E
C
G
JEDEC TO-263AB
COLLECTOR
G (FLANGE)
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2002 Fairchild Semiconductor Corporation
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
1 page  
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
Typical Performance Curves Unless Otherwise Specified (Continued)
40
RG = 10Ω, L = 2mH, VCE = 960V
35 TJ = 25oC, TJ = 150oC, VGE = 12V
30
50
RG = 10Ω, L = 2mH, VCE = 960V
40 TJ = 25oC, TJ = 150oC, VGE = 12V
30
25 20
20
15
0
TJ = 25oC, TJ = 150oC, VGE = 15V
5 10 15 20
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
10
TJ = 25oC OR TJ = 150oC, VGE = 15V
0
0 5 10 15 20
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
400
RG = 10Ω, L = 2mH, VCE = 960V
350
300 VGE = 12V, VGE = 15V, TJ = 150oC
250
200
150
100
0
VGE = 12V, VGE = 15V, TJ = 25oC
5 10 15
ICE, COLLECTOR TO EMITTER CURRENT (A)
20
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
300
RG = 10Ω, L = 2mH, VCE = 960V
250
200
TJ = 150oC, VGE = 12V OR 15V
150
100
50
0
TJ = 25oC, VGE = 12V OR 15V
5 10 15
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
20
100
DUTY CYCLE <0.5%, VCE = 20V
PULSE DURATION = 250µs
80
60
40
20
07
TC = 25oC
TC = 150oC
TC = -55oC
8 9 10 11 12 13 14
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
15
©2002 Fairchild Semiconductor Corporation
20
IG (REF) = 1mA, RL = 60Ω, TC = 25oC
15
VCE = 1200V VCE = 800V
10
VCE = 400V
5
0
0 20 40 60 80 100
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
120
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1
5 Page | ||
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| PDF Descargar | [ Datasheet HGTP10N120BN.PDF ] | |
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