Datasheet.kr   

HGTP10N40C1D 데이터시트 PDF




Intersil Corporation에서 제조한 전자 부품 HGTP10N40C1D은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 HGTP10N40C1D 자료 제공

부품번호 HGTP10N40C1D 기능
기능 10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
제조업체 Intersil Corporation
로고 Intersil Corporation 로고


HGTP10N40C1D 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 6 페이지수

미리보기를 사용할 수 없습니다

HGTP10N40C1D 데이터시트, 핀배열, 회로
April 1995
HGTP10N40C1D, HGTP10N40E1D,
HGTP10N50C1D, HGTP10N50E1D
10A, 400V and 500V N-Channel IGBTs
with Anti-Parallel Ultrafast Diodes
Features
Package
• 10A, 400V and 500V
• VCE(ON): 2.5V Max.
• TFALL: 1µs, 0.5µs
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• Anti-Parallel Diode
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
Applications
• Power Supplies
• Motor Drives
• Protective Circuits
Description
The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D,
and HGTP10N50E1D are n-channel enhancement-mode
insulated gate bipolar transistors (IGBTs) designed for high
voltage, low on-dissipation applications such as switching reg-
ulators and motor drivers. They feature a discrete anti-parallel
diode that shunts current around the IGBT in the reverse
direction without introducing carriers into the depletion region.
These types can be operated directly from low power inte-
grated circuits.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
E
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTP10N40C1D
TO-220AB
10N40C1D
HGTP10N40E1D
TO-220AB
10N40E1D
HGTP10N50C1D
TO-220AB
10N50C1D
HGTP10N50E1D
TO-220AB
10N50E1D
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCES
Collector-Gate Voltage RGE = 1M. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGE
Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . IC25
at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . IC90
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . TJ, TSTG
HGTP10N40C1D
HGTP10N40E1D
400
400
±20
17.5
10
75
0.6
-55 to +150
HGTP10N50C1D
HGTP10N50E1D
500
500
±20
17.5
10
75
0.6
-55 to +150
UNITS
V
V
V
A
W
W/oC
oC
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-20
File Number 2405.5




HGTP10N40C1D pdf, 반도체, 판매, 대치품
HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D
Typical Performance Curves (Continued)
1200
1000
f = 0.1MHz
800
CISS
600
400
200
COSS
CRSS
0
0 10 20 30 40
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
50
FIGURE 7. CAPACITANCE vs COLLECTOR-TO-EMITTER
VOLTAGE
400
IC = 20A, VGE = 10V, VCL = 300V
L =25µH, RG = 25
300
200
3.00
2.75
2.50
2.25
IC = 10A, VGE = 10V
IC = 10A, VGE = 15V
2.00
1.75
IC = 5A, VGE = 10V
1.50
+25
IC = 5A, VGE = 15V
+50
+75
+100
+125
TJ, JUNCTION TEMPERATURE (oC)
+150
FIGURE 8. TYPICAL VCE(ON) vs TEMPERATURE
WOFF = IC * VCEdt
VGE
IC
VCE
100
0
+25 +50 +75 +100 +125
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. TYPICAL TURN-OFF DELAY TIME
+150
800
IC = 5A, VGE = 10V, VCL = 300V
700 L = 50µH, RG = 50
600
40E1/50E1
500
400
40C1/50C1
300
200
100
0
+25
+50
+75
+100
+125
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 11. TYPICAL FALL TIME (IC = 5A)
+150
FIGURE 10. TYPICAL INDUCTIVE SWITCHING WAVEFORMS
800
IC = 10A, VGE = 10V, VCL = 300V
700 L = 50µH, RG = 50
600
500 40E1/50E1
400
40C1/50C1
300
200
100
0
+25
+50
+75
+100
+125
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 12. TYPICAL FALL TIME (IC = 10A)
+150
3-23

4페이지












구       성 총 6 페이지수
다운로드[ HGTP10N40C1D.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
HGTP10N40C1

10A/ 12A/ 400V and 500V N-Channel IGBTs

Intersil Corporation
Intersil Corporation
HGTP10N40C1D

10A/ 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes

Intersil Corporation
Intersil Corporation

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵