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16N05 데이터시트 PDF




Fairchild Semiconductor에서 제조한 전자 부품 16N05은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 16N05 자료 제공

부품번호 16N05 기능
기능 RFD16N05
제조업체 Fairchild Semiconductor
로고 Fairchild Semiconductor 로고


16N05 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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16N05 데이터시트, 핀배열, 회로
Data Sheet
RFD16N05, RFD16N05SM
November 2003
16A, 50V, 0.047 Ohm, N-Channel Power
MOSFETs
The RFD16N05 and RFD16N05SM N-channel power
MOSFETs are manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of
LSI integrated circuits, gives optimum utilization of silicon,
resulting in outstanding performance. They were designed
for use in applications such as switching regulators,
switching converters, motor drivers, and relay drivers. These
transistors can be operated directly from integrated circuits.
Formerly developmental type TA09771.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD16N05
RFD16N05SM
TO-251AA
TO-252AA
D16N05
D16N05
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e., RFD16N05SM9A.
Packaging
JEDEC TO-251AA
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
Features
• 16A, 50V
• rDS(ON) = 0.047
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-252AA
DRAIN (FLANGE)
GATE
SOURCE
©2003 Fairchild Semiconductor Corporation
RFD16N05, RFD16N05SM Rev. B1
Free Datasheet http://www.datasheet4u.net/




16N05 pdf, 반도체, 판매, 대치품
RFD16N05, RFD16N05SM
Typical Performance Curves Unless Otherwise Specified (Continued)
100
STARTING TJ = 25oC
10
STARTING TJ = 150oC
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS-VDD) +1]
1
0.01
0.1
1
tAV, TIME IN AVALANCHE (ms)
10
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
50
VGS = 20V VGS = 10V
VGS = 8V
VGS = 7V
40
PULSE DURATION = 80µs
30
DUTY CYCLE = 0.5% MAX
TC = 25oC
VGS = 6V
20
10 VGS = 5V
VGS = 4.5V
0
0 1 2 34
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
50
VDD = 15V
PULSE DURATION = 80µs
40 DUTY CYCLE = 0.5% MAX
-55oC
30
175oC
25oC
20
10
0
0 24 68
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
10
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0 VGS = 10V, ID = 16A
1.5
1.0
0.5
0
-80 -40
0
40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2.0
VGS = VDS, ID = 250µA
1.5
2.0
ID = 250µA
1.5
1.0 1.0
0.5
0
-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
©2003 Fairchild Semiconductor Corporation
0.5
0
-80 -40
0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
RFD16N05, RFD16N05SM Rev. B1
Free Datasheet http://www.datasheet4u.net/

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16N05 전자부품, 판매, 대치품
RFD16N05, RFD16N05SM
PSPICE Electrical Model
.SUBCKT RFD16N05 2 1 3 ; rev 10/31/94
CA 12 8 1.788e-10
CB 15 14 1.875e-10
CIN 6 8 8.33e-10
DBODY 7 5 DBDMOD
DBREAK 5 11 DBKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 64.89
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTO 20 6 18 8 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 4.56e-9
LSOURCE 3 7 4.13e-9
MOS1 16 6 8 8 MOSMOD M = 0.99
MOS2 16 21 8 8 MOSMOD M = 0.01
RBREAK 17 18 RBKMOD 1
RDRAIN 50 16 RDSMOD 0.4e-3
RGATE 9 20 3.0
RIN 6 8 1e9
RSCL1 5 51 RSCLMOD 1e-6
RSCL2 5 50 1e3
RSOURCE 8 7 RDSMOD 21.5e-3
RVTO 18 19 RVTOMOD 1
DPLCAP 5
10
DRAIN
2
LDRAIN
GATE
9 20
1
LGATE RGATE
-
ESG
6
8
+
EVTO
+ 18 -
8
RSCL2
RSCL1
+ 51
5
51
ESCL
50
RDRAIN
16
VTO +
21
6
MOS1
RIN CIN
8
DBREAK
11 +
EBREAK
17
18
MOS2
-
RSOURCE 7
DBODY
LSOURCE
3
SOURCE
S1A
12
13
8
S2A
14 15
13
S1B
CA
EGS
S2B
13
+
6
8
-
CB
+
EDS
-
14
5
8
RBREAK
17 18
RVTO
19
IT
VBAT
+
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 0.82
ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/94,7))}
.MODEL DBDMOD D (IS = 2.5e-13 RS = 7.1e-3 TRS1 = 3.04e-3 TRS2 = -10e-6 CJO = 1.12e-9 TT = 5.6e-8)
.MODEL DBKMOD D (RS = 2.51e-1 TRS1 = -6.57e-4 TRS2 = 1.66e-6)
.MODEL DPLCAPMOD D (CJO = 6.1e-10 IS = 1e-30 N = 10)
.MODEL MOSMOD NMOS (VTO = 3.96 KP = 16.68 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL RBKMOD RES (TC1 = 1.07e-3 TC2 = -7.19e-7)
.MODEL RDSMOD RES (TC1 = 5.45e-3 TC2 = 1.66e-5)
.MODEL RSCLMOD RES (TC1 = 1.25e-3 TC2 = 17e-6)
.MODEL RVTOMOD RES (TC1 = -5.15e-3 TC2 = -4.83e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.25 VOFF= -3.25)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.25 VOFF= -5.25)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.56 VOFF= 5.56)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 5.56 VOFF= 0.56)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; written by William J. Hepp and C. Frank Wheatley.
©2003 Fairchild Semiconductor Corporation
RFD16N05, RFD16N05SM Rev. B1
Free Datasheet http://www.datasheet4u.net/

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