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부품번호 | 04N50Z 기능 |
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기능 | NSS04N50Z | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 9 페이지수
NDP04N50Z, NDD04N50Z
N-Channel Power MOSFET
500 V, 2.7 W
Features
• Low ON Resistance
• Low Gate Charge
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol NDP NDD Unit
Drain−to−Source Voltage
Continuous Drain Current RqJC
Continuous Drain Current
RqJC, TA = 100°C
Pulsed Drain Current, VGS @ 10 V
Power Dissipation RqJC
Gate−to−Source Voltage
Single Pulse Avalanche Energy,
ID = 3.4 A
ESD (HBM) (JESD22−A114)
Peak Diode Recovery
VDSS
ID
ID
IDM
PD
VGS
EAS
Vesd
dv/dt
500
3.4 3.0
2.1 1.9
V
A
A
14 12
75 61
±30
120
A
W
V
mJ
2800
4.5 (Note 1)
V
V/ns
Continuous Source Current
(Body Diode)
IS 3.4 A
Maximum Temperature for Soldering
Leads
TL
260 °C
Operating Junction and
Storage Temperature Range
TJ, Tstg
−55 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. ID v 3.4 A, di/dt ≤ 200 A/ms, VDD ≤ BVDSS, TJ ≤ 150°C.
http://onsemi.com
VDSS
500 V
RDS(on) (MAX) @ 1.5 A
2.7 W
N−Channel
D (2)
G (1)
S (3)
1 23
TO−220AB
CASE 221A
STYLE 5
4
4
1 23
IPAK
CASE 369D
STYLE 2
12
3
DPAK
CASE 369AA
STYLE 2
MARKING AND ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
July, 2010 − Rev. 0
1
Publication Order Number:
NDD04N50Z/D
Free Datasheet http://www.datasheet4u.net/
NDP04N50Z, NDD04N50Z
10.0
1.0 TJ = 150°C
TJ = 125°C
0.1
0 50 100 150 200 250 300 350 400 450 500
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Drain−to−Source Leakage Current
versus Voltage
700
650
600
550
500
450
400
350
300
250
200
150
100
50
0
0.01
Coss
Ciss
Crss
TJ = 25°C
VGS = 0 V
f = 1 MHz
0.1 1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 8. Capacitance Variation
100
12
10
8 QGD
6
VDS
QT
QGS
300
VGS 250
200
150
4 100
VDS = 250 V
2
ID = 3.4 A
50
TJ = 25°C
00
0 1 2 3 4 5 6 7 8 9 10 11 12
Qg, TOTAL GATE CHARGE (nC)
Figure 9. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
1000
100
VDD = 250 V
ID = 3.4 A
VGS = 10 V
10
ttttddrf ((oofnf))
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 10. Resistive Switching Time Variation
versus Gate Resistance
10.0
TJ = 150°C
1.0
125°C
25°C
−55°C
0.1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 11. Diode Forward Voltage versus
Current
1.2
http://onsemi.com
4
Free Datasheet http://www.datasheet4u.net/
4페이지 NDP04N50Z, NDD04N50Z
PACKAGE DIMENSIONS
BF
Q
H
Z
4
1 23
A
K
L
V
G
N
D
TO−220
CASE 221A−09
ISSUE AF
−T−
SEATING
PLANE
C
TS
U
R
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
INCHES
DIM MIN MAX
A 0.570 0.620
B 0.380 0.405
C 0.160 0.190
D 0.025 0.035
F 0.142 0.161
G 0.095 0.105
H 0.110 0.155
J 0.014 0.025
K 0.500 0.562
L 0.045 0.060
N 0.190 0.210
Q 0.100 0.120
R 0.080 0.110
S 0.045 0.055
T 0.235 0.255
U 0.000 0.050
V 0.045 ---
Z --- 0.080
STYLE 5:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
MILLIMETERS
MIN MAX
14.48 15.75
9.66 10.28
4.07 4.82
0.64 0.88
3.61 4.09
2.42 2.66
2.80 3.93
0.36 0.64
12.70 14.27
1.15 1.52
4.83 5.33
2.54 3.04
2.04 2.79
1.15 1.39
5.97 6.47
0.00 1.27
1.15 ---
--- 2.04
http://onsemi.com
7
Free Datasheet http://www.datasheet4u.net/
7페이지 | |||
구 성 | 총 9 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
04N50Z | NSS04N50Z | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |