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Número de pieza AN650
Descripción Si468X SCHEMATICS AND LAYOUT GUIDE
Fabricantes Silicon Laboratories 
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AN650
Si468X SCHEMATICS AND LAYOUT GUIDE
1. Introduction
This document provides:
General Si468x design guidelines, which include schematics, layout, and BOM
Si468x FM/FMHD/T-DMB/DAB antenna/matching network design guidelines
2. Si468x WLCSP Schematic and Layout
2.1. Schematic Design and Component Selection
This section shows the minimal schematic and layout options required for optimal performance of Si468x in the
WLCSP package. Population options are provided to mitigate system noise, to use analog audio output, and to
operate the Si468x with crystal.
Rev. 0.5 10/13
Copyright © 2013 by Silicon Laboratories
AN650
Free Datasheet http://www.datasheet4u.net/

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AN650 pdf
AN650
2.1.3.1. BOM
Table 1. Required BOM
Ref Designator
Description
C1 VA supply bypass capacitor,
5.6 pF, 10%, Z5U/X7R
C2 VA supply bypass capacitor,
2.2 nF, 10%, Z5U/X7R
C5, C6, C7
VIO supply bypass capacitor,
2.2 nF, 10%, Z5U/X7R
Note
Table 2. Optional BOM
Ref Designator
Description
Note
L1 IND, 0402, SM, 100nH This value is required for achieving
the best conducted sensitivity result.
L2 IND, 0402, SM, 68nH This value is required for achieving
the best conducted sensitivity result.
C3 VA supply bypass capacitor,
0.1F, 10%, Z5U/X7R
C4 DACREF bypass capacitor,
1F, 10% Z5U/X7R
C8, C9, C10
Supply bypass capacitor,
1F, 10%, Z5U/X7R
C11, C12
Audio AC-coupling capacitor,
1F, 10% Z5U/X7R
C13 AC coupling cap, SM, 0402, For antenna matching. See value
18pF
details in section “Antenna and
matching network design and layout.”
X1 Abracon, ABM8-19.200MHz- For design temperature ranges from
10-1-U-T, 19.2 MHz
–10 deg C to 60 deg C. Contact Sili-
con Laboratories for recommenda-
tions with more flexibility.
Rev. 0.5
5
Free Datasheet http://www.datasheet4u.net/

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AN650 arduino
4.1.2. Headphone Antenna Schematic
J1
HP_JACK
S
R
T
D1 D2 D3
AN650
L2
L1
VHFI
C13
VHFSW
F1
RIGHT CHANNEL
F2
LEFT CHANNEL
Figure 6. Headphone Antenna Design
The headphone antenna implementation requires components L1, L2, C13, F1, F2, and F3 for a minimal
implementation. In Figure 6, a headphone and circuit with headphone audio common grounded is used. The ESD
protection diodes and headphone amplifier components are system components that will be required for proper
implementation of any tuner. Inductors 1 and 2 are selected to maximize the voltage gain across the DAB/T-DMB
band. C13 is switched in with VFHSW to ensure the FM/FMHD band is properly resonated. The user should refer
to property “0x1712” of AN649 to understand how to enable and disable the switch.
Ferrite beads F1 and F2 provide a low-impedance audio path and high-impedance RF path between the
headphone amplifier and the headphone. Ferrite beads should be placed on each antenna conductor connected to
nodes other than the VHFI such as left and right audio, microphone audio, switching, etc. In the example shown in
the figure above, these nodes are the left and right audio conductors. Ferrite beads should be 2.5 kor greater at
100 MHz, such as the Murata BLM18BD252SN1. High impedance is desirable to reduce antenna coupling to the
other conductors.
L1 and L2 are used as audio ground. Diodes should be chosen with no more than 1 pF parasitic capacitance, and
diode capacitance should be minimized. If D1 and D2 must be chosen with a capacitance greater than 1 pF, they
should be placed between the ferrite beads and the headphone amplifier to minimize PCB parasitic capacitance.
This placement will, however, reduce the effectiveness of the ESD protection devices. Diode D3 may not be
relocated and must therefore have a capacitance less than 1 pF. Note that each diode package contains two
devices to protect against positive and negative polarity ESD events.
Figure 7. Optional RF Shunt Capacitors to Reduce Noise Coupling to Antenna
Rev. 0.5
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