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PDF APM4015PU Data sheet ( Hoja de datos )

Número de pieza APM4015PU
Descripción P-Channel Enhancement Mode MOSFET
Fabricantes ANPEC 
Logotipo ANPEC Logotipo



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APM4015PU
P-Channel Enhancement Mode MOSFET
Features
Pin Description
-40V/-45A,
RDS(ON)= 13m(typ.) @ VGS=-10V
RDS(ON)= 19m(typ.) @ VGS=-4.5V
Super High Dense Cell Design
Reliable and Rugged
Lead Free and Green Devices Available (RoHS
Compliant)
Applications
GD
S
Top View of TO-252
S
Power Management in LCD TV Inverter
G
D
P-Channel MOSFET
Ordering and Marking Information
APM4015P
Assembly Material
Handling Code
Temp. Range
Package Code
Package Code
U : TO-252
Operating
C : -55
Jtuon1c5ti0oonCTemp.
Range
Handling Code
TR : Tape & Reel
Assembly Material
L : Lead Free Device
G : Halogen and Lead Free Device
APM4015P U :
APM4015P
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
Rev. A. 3 - Feb., 2008
1
www.anpec.com.tw
Free Datasheet http://www.datasheet4u.net/

1 page




APM4015PU pdf
APM4015PU
Typical Characteristics (Cont.)
Output Characteristics
100
V =-6,-7,-8,-9,-10V
GS
90
80
-5V
70
-4.5V
60
50
40 -4V
30
20 -3.5V
10
-3V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
-VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
35
30
V =-4.5V
25 GS
20
15
V =-10V
GS
10
5
0
0 20 40 60 80 100
-ID - Drain Current (A)
Drain-Source On Resistance
40
I = -20A
D
35
30
25
20
15
10
5
2 3 4 5 6 7 8 9 10
-VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
I
DS
=-250µA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright © ANPEC Electronics Corp.
Rev. A. 3 - Feb., 2008
5
www.anpec.com.tw
Free Datasheet http://www.datasheet4u.net/

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