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부품번호 | HGTP12N60A4D 기능 |
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기능 | 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 8 페이지수
Data Sheet
HGTG12N60A4D, HGTP12N60A4D,
HGT1S12N60A4DS
December 2001
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGTG12N60A4D, HGTP12N60A4D and
HGT1S12N60A4DS are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. The
IGBT used is the development type TA49335. The diode
used in anti-parallel is the development type TA49371.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49337.
Ordering Information
PART NUMBER
HGTG12N60A4D
PACKAGE
TO-247
BRAND
12N60A4D
HGTP12N60A4D
HGT1S12N60A4DS
TO-220AB
TO-263AB
12N60A4D
12N60A4D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, e.g.
HGT1S12N60A4DS9A.
Symbol
C
G
E
Features
• >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A
• 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oC
• Low Conduction Loss
• Temperature Compensating SABER™ Model
www.fairchildsermi.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Packaging
JEDEC TO-220AB ALTERNATE VERSION
COLLECTOR
(FLANGE)
E
C
G
JEDEC TO-263AB
COLLECTOR
G (FLANGE)
E
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(FLANGE)
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
Typical Performance Curves Unless Otherwise Specified (Continued)
24
DUTY CYCLE < 0.5%, VGE = 12V
PULSE DURATION = 250µs
20
16
TJ = 150oC
12
TJ = 125oC
8
4 TJ = 25oC
0
0 0.5 1.0 1.5 2 2.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
24
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs
20
16
TJ = 150oC
12 TJ = 125oC
8
4 TJ = 25oC
0
0 0.5 1.0 1.5 2 2.5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
700
RG = 10Ω, L = 500µH, VCE = 390V
600
500 TJ = 125oC, VGE = 12V, VGE = 15V
400
300
200
100 TJ = 25oC, VGE = 12V, VGE = 15V
0
2 4 6 8 10 12 14 16 18 20 22 24
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
18
RG = 10Ω, L = 500µH, VCE = 390V
17
16
15 TJ = 25oC, TJ = 125oC, VGE = 12V
14
13
12
TJ = 25oC, TJ = 125oC, VGE = 15V
11
10
2 4 6 8 10 12 14 16 18 20 22 24
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
400
RG = 10Ω, L = 500µH, VCE = 390V
350
300
250 TJ = 125oC, VGE = 12V OR 15V
200
150
100
50
TJ = 25oC, VGE = 12V OR 15V
0 2 4 6 8 10 12 14 16 18 20 22 24
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
32
RG = 10Ω, L = 500µH, VCE = 390V
28
24
TJ = 125oC OR TJ = 25oC, VGE = 12V
20
16
12
8
TJ = 25oC OR TJ = 125oC, VGE = 15V
4
0
2 4 6 8 10 12 14 16 18 20 22 24
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
4페이지 HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
Typical Performance Curves Unless Otherwise Specified (Continued)
100
0.50
0.20
10-1 0.10
0.05
0.02
0.01
10-210-5
SINGLE PULSE
10-4
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3
10-2
10-1
100
101
t1, RECTANGULAR PULSE DURATION (s)
FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
HGTP12N60A4D
DIODE TA49371
RG = 10Ω
L = 500µH
DUT
+
-
VDD = 390V
FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT
90%
VGE
VCE
ICE
EOFF
10%
EON2
90%
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 25. SWITCHING TEST WAVEFORMS
©2001 Fairchild Semiconductor Corporation
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
HGTP12N60A4 | 600V/ SMPS Series N-Channel IGBTs | Fairchild Semiconductor |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |