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부품번호 | 13007N 기능 |
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기능 | ST13007N | ||
제조업체 | STMicroelectronics | ||
로고 | |||
전체 7 페이지수
ST13007N
® ST13007NFP
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
s HIGH VOLTAGE CAPABILITY
s NPN TRANSISTOR
s LOW SPREAD OF DYNAMIC PARAMETERS
s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s VERY HIGH SWITCHING SPEED
APPLICATIONS
s ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
s SWITCH MODE POWER SUPPLIES
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
They use a Cellular Emitter structure to enhance
switching speeds.
3
2
1
TO-220
TO-220FP
3
2
1
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCEV
V CEO
V EBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Collect or-Emitter Voltage (VBE = -1.5V)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Tot al Dissipation at Tc ≤ 25 oC
Storage Temperature
Max. Operating Junction Temperature
March 1999
Value
ST13007N
S T13 0 07NF P
700
400
9
8
16
4
8
80 33
-65 to 150
150
Uni t
V
V
V
A
A
A
A
W
oC
oC
1/7
Free Datasheet http://www.datasheet4u.net/
ST13007N / ST13007NFP
Inductive Fall Time
Inductive Storage Time
Reverse Biased SOA
RBSOA and Inductive Load Switching Test
Circuits
1) F ast elect ronic switch
2) Non-inductive Resistor
3) F ast recovery rectifier
4/7
Free Datasheet http://www.datasheet4u.net/
4페이지 ST13007N / ST13007NFP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
http://www.st.com
.
7/7
Free Datasheet http://www.datasheet4u.net/
7페이지 | |||
구 성 | 총 7 페이지수 | ||
다운로드 | [ 13007N.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
13007 | NPN Epitaxial Silicon Transistor | Elite |
13007A | MJE13007A | Mospec Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |