PDF HGTP12N60D1 Data sheet ( Hoja de datos )

Número de pieza	HGTP12N60D1
Descripción	12A/ 600V N-Channel IGBT
Fabricantes	Intersil Corporation
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No Preview Available ! HGTP12N60D1 April 1995 12A, 600V N-Channel IGBT Features Package • 12A, 600V • Latch Free Operation • Typical Fall Time <500ns • High Input Impedance • Low Conduction Loss www.DataSheet4DU.ecosmcription JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. Terminal Diagram N-CHANNEL ENHANCEMENT MODE C The IGBTs are ideal for many high voltage switching applica- tions operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. G PACKAGING AVAILABILITY E PART NUMBER PACKAGE BRAND HGTP12N60D1 TO-220AB G12N60D1 Absolute Maximum Ratings TC = +25oC, Unless Otherwise Speciﬁed Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 at VGE = 15V at TC = +90oC . . . . . . . . . . . . . . . . . . . IC90 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Switching Safe Operating Area at TJ = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL NOTE: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. HGTP12N60D1 600 600 21 12 48 ±25 30A at 0.8 BVCES 75 0.6 -55 to +150 260 UNITS V V A A A V - W W/oC oC oC INTERSIL VmCORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 \| Copyright © Intersil Corporation 1999 3-38 File Number 2830.3 1 page

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Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
HGTP12N60D1	12A/ 600V N-Channel IGBT	Intersil Corporation
HGTP12N60D1	600V N-Channel IGBT	Intersil Corporation

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