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부품번호 HGTP14N40F3VL 기능
기능 330mJ/ 400V/ N-Channel Ignition IGBT
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HGTP14N40F3VL 데이터시트, 핀배열, 회로
January 2002
HGTP14N40F3VL / HGT1S14N40F3VLS
330mJ, 400V, N-Channel Ignition IGBT
General Description
This N-Channel IGBT is a MOS gated, logic level device
which is intended to be used as an ignition coil driver in au-
tomotive ignition circuits. Unique features include an active
voltage clamp between the drain and the gate and ESD pro-
tection for the logic level gate. Some specifications are
unique to this automotive application and are intended to
assure device survival in this harsh environment.
Formerly Developmental Type 49023
Applications
• Automotive Ignition Coil Driver Circuits
• Coil-On Plug Applications
Features
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• Max TJ = 175oC
• SCIS Energy = 330mJ at TJ = 25oC
Package
JEDEC TO-263AB
D² -Pak
G
E
JEDEC TO-220AB
Symbol
EC
G
GATE
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
BVCES
BVCGR
ESCIS25
IC25
IC90
VGES
VGEM
ICO
ICO
PD
TJ, TSTG
TL
Tpkg
ESD
Parameter
Collector to Emitter Breakdown Voltage (IC = 1 mA)
Collector to Gate Breakdown Voltage (RGE = 10K)
Drain to Source Avalanche Energy at L = 2.3mHy, TC = 25°C
Collector Current Continuous, at TC = 25°C, VGE = 4.5V
Collector Current Continuous, at TC = 90°C, VGE = 4.5V
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
L = 2.3mHy, TC = 25°C
L = 2.3mHy, TC = 150°C
Power Dissipation Total TC = 25°C
Power Dissipation Derating TC > 25°C
Operating and Storage Junction Temperature Range
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
Max Lead Temp for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at 100pF, 1500
COLLECTOR
R1
EMITTER
Ratings
420
420
330
38
35
±10
±12
17
12
262
1.75
-40 to 175
300
260
6
Units
V
V
mJ
A
A
V
V
A
A
W
W/°C
°C
°C
°C
KV
©2002 Fairchild Semiconductor Corporation
HGTP14N40F3VL / HGT1S14N40F3VLS Rev. B1, February 2002




HGTP14N40F3VL pdf, 반도체, 판매, 대치품
Typical Performance Curves (Continued)
40
VGE = 8.0V
VGE = 5.0V
30 VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
20
10
TJ = 175°C
0
0 1.0 2.0 3.0 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter Current vs Collector
to Emitter On-State Voltage
40
VGE = 4.5V
30
20
10
0
25 50 75 100 125 150 175
TC CASE TEMPERATURE (°C)
Figure 9. DC Collector Current vs Case
Temperature
10000
1000
VECS = 24V
100
VCES = 350V
10
VCES = 250V
1.0
0.1
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Leakage Current vs Junction
Temperature
©2002 Fairchild Semiconductor Corporation
30
DUTY CYCLE < 0.5%, VCE = 5V
PULSE DURATION = 250µs
25
20
15
10
5
0
1.0
TJ = 25°C
TJ = 175°C
TJ = -40°C
1.5 2.0 2.5 3.0 3.5
4.0
VGE, GATE TO EMITTER VOLTAGE (V)
Figure 8. Transfer Characteristics
4.5
2.2
VCE = VGE
ICE = 1mA
2.0
1.8
1.6
1.4
1.2
1.0
-50 -25 0 25 50 75 100 125 150 175
TJ JUNCTION TEMPERATURE (°C)
Figure 10. Threshold Voltage vs Junction
Temperature
14
ICE = 6.5A, VGE = 5V, RG = 1K
12
10 Inductive tOFF
8
6
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Switching Time vs Junction
Temperature
HGTP14N40F3VL / HGT1S14N40F3VLS Rev. B1, February 2002

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HGTP14N40F3VL 전자부품, 판매, 대치품
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As used herein:
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effectiveness.
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4

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