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PDF HGTP14N40F3VL Data sheet ( Hoja de datos )
| Número de pieza | HGTP14N40F3VL | |
| Descripción | 14A/ 400V N-Channel/ Logic Level Voltage Clamping IGBT | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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HGTP14N40F3VL
April 1995
14A, 400V N-Channel,
Logic Level Voltage Clamping IGBT
Features
Package
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• TJ = +150oC
• Ignition Energy Capable
JEDEC TO-220AB
EMITTER
COLLECTOR
GATE
COLLECTOR
(FLANGE)
Applications
• Automotive Ignition
• Small Engine Ignition
• Fuel Ignitor
Description
This N-Channel IGBT is a MOS gated, logic level device which is
intended to be used as an ignition coil driver in automotive ignition
circuits. Unique features include an active voltage clamp between
the drain and the gate and ESD protection for the logic level gate.
Some specifications are unique to this automotive application and
are intended to assure device survival in this harsh environment.
The development type number for this device is TA49023.
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTP14N40F3VL
TO-220AB
14N40FVL
NOTE: When ordering, use the entire part number.
Symbol
GATE
COLLECTOR
EMITTER
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
Collector-Emitter Breakdown Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector-Gate Breakdown Voltage RGE = 10kΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR
Collector Current Continuous
VGE = 4.5V at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC25
VGE = 4.5V at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC90
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate-Emitter Voltage Pulsed or . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Gate-Emitter Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IGEM
Open Secondary Turn-Off Current
L = 2.3mH at +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICO
L = 2.3mH at +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICO
Drain to Source Avalanche Energy at L = 2.3mH, TC = +25oC . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PT
Power Dissipation Derating TC > +25oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Electrostatic Voltage at 100pF, 1500Ω. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD
HGTP14N40F3VL
420
420
19
14
±10
±12
±10
17
12
330
83
0.67
-40 to +150
260
6
UNITS
V
V
A
A
V
V
mA
A
A
mJ
W
W/oC
oC
oC
KV
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
407-727-9207 | Copyright © Intersil Corporation 1999
3-50
File Number 3407.2
1 page  
Test Circuits
HGTP14N40F3VL
PULSE
GEN
2.3mH
RG
G
C
DUT
E
VDD
L = 550µH
1/RG = 1/RGEN + 1/RGE
RGEN = 50Ω
G
C
DUT
5V
RGE = 50Ω
E
+
VCC
- 320V
FIGURE 13. USE TEST CIRCUIT
FIGURE 14. INDUCTIVE SWITCHING TEST CIRCUIT
Handling Precautions for IGBT’s
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBT’s are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBT’s
can be handled safely if the following basic precautions are
taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “†ECCOSORBD LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in per-
manent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate open-
circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
† Trademark Emerson and Cumming, Inc.
3-54
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