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HGTP1N120BND 데이터시트 PDF




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기능 5.3A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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HGTP1N120BND 데이터시트, 핀배열, 회로
HGTP1N120BND, HGT1S1N120BNDS
Data Sheet
January 2000 File Number 4650.2
5.3A, 1200V, NPT Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTP1N120BND and the HGT1S1N120BNDS are
Non-Punch Through (NPT) IGBT designs. They are new
members of the MOS gated high voltage switching IGBT
family. IGBTs combine the best features of MOSFETs and
bipolar transistors. This device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor.
The IGBT is development type number TA49316. The diode
used in anti-parallel with the IGBT is the RHRD4120
(TA49056).
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly Developmental Type TA49314.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP1N120BND
TO-220AB
1N120BND
HGT1S1N120BNDS TO-263AB
1N120BND
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB in tape and reel, i.e. HGT1S1N120BNDS9A.
Symbol
C
G
E
Features
• 5.3A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical EOFF. . . . . . . . . . . . . . . . . . . 120µJ at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model www.intersil.com/
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-220AB
E
C
G
COLLECTOR
(FLANGE)
JEDEC TO-263AB
G
E
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,417,385
4,605,948
4,684,413
4,430,792
4,620,211
4,694,313
4,443,931
4,631,564
4,717,679
4,466,176
4,639,754
4,743,952
4,516,143
4,639,762
4,783,690
4,532,534
4,641,162
4,794,432
4,587,713
4,644,637
4,801,986
4,803,533
4,888,627
4,809,045
4,890,143
4,809,047
4,901,127
4,810,665
4,904,609
4,823,176
4,933,740
4,837,606
4,963,951
4,860,080
4,969,027
4,883,767
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
SABER™ is a trademark of Analogy, Inc.




HGTP1N120BND pdf, 반도체, 판매, 대치품
HGTP1N120BND, HGT1S1N120BNDS
Typical Performance Curves Unless Otherwise Specified (Continued)
6
5 TC = 25oC
4 TC = -55oC
3
TC = 150oC
2
1
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VGE = 13V
0
0 2 4 6 8 10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
6
5
4
3 TC = -55oC
TC = 25oC
TC = 150oC
2
1 PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VGE = 15V
0
0 2 4 6 8 10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
1200
RG = 82, L = 4mH, VCE = 960V
1000
800
TJ = 150oC, VGE = 13V
TJ = 150oC, VGE = 15V
600
400
200
0
0.5
TJ = 25oC, VGE = 13V
TJ = 25oC, VGE = 15V
1 1.5 2 2.5
ICE, COLLECTOR TO EMITTER CURRENT (A)
3
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
250
RG = 82, L = 4mH, VCE = 960V
200
TJ = 150oC, VGE = 13V OR 15V
150
100 TJ = 25oC, VGE = 13V OR 15V
50
0
0.5 1 1.5 2 2.5
ICE, COLLECTOR TO EMITTER CURRENT (A)
3
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
24
RG = 82, L = 4mH, VCE = 960V
20
16 TJ VGE
25oC 13V
150oC 13V
12 25oC 15V
150oC 15V
8
0 1 1.5 2 2.5
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
3
4
28
RG = 82, L = 4mH, VCE = 960V
24
20 TJ = 25oC, TJ = 150oC, VGE = 13V
16
12 TJ = 25oC, TJ = 150oC, VGE = 15V
8
4
0.5 1 1.5 2 2.5
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
3

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HGTP1N120BND 전자부품, 판매, 대치품
HGTP1N120BND, HGT1S1N120BNDS
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 21.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM. td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
The sum of device switching and conduction losses must
not exceed PD. A 50% duty factor was used (Figure 3) and
the conduction losses (PC) are approximated by
PC = (VCE x ICE)/2.
EON and EOFF are defined in the switching waveforms
shown in Figure 21. EON is the integral of the instantaneous
power loss (ICE x VCE) during turn-on and EOFF is the
integral of the instantaneous power loss (ICE x VCE) during
turn-off. All tail losses are included in the calculation for
EOFF; i.e., the collector current equals zero (ICE = 0).
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
7 ECCOSORBD™ is a trademark of Emerson and Cumming, Inc.

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